VBsemi Microgreen Semiconductor has recently launched a brand new power MOSFET product called SGT (Shielded Gate Trench) technology. This technology changes the shape of the internal electric field of the MOSFET, transforming the traditional triangular electric field into a compressed trapezoidal electric field, further reducing the thickness of the EPI layer and lowering the on-state resistance Rds(on). The new generation of medium and low voltage power MOSFET products from Microgreen has widely adopted SGT technology. Models including VBGQT1102, VBGM1102, VBGL1103, VBGL1805, VBGE1805, among others, all incorporate this technology.

(Trench MOS and SGT MOS Device Structure Diagram)

SGT MOSFET offers many advantages over traditional trench MOSFETs. The SGT process has a trench depth 3-5 times deeper than that of ordinary trench processes. By adding a polycrystalline silicon electrode, known as a shielding electrode or coupling electrode, under the gate electrode, the shielding electrode effectively shields the gate electrode from the drift region. As a result, SGT MOSFETs reduce the Miller capacitance and gate charge, improve switching speed, and reduce switching losses. Furthermore, SGT MOSFETs reduce the critical field strength of the drift region, lowering the on-state resistance, with an internal resistance more than 2 times lower than that of ordinary trench MOSFETs.

(Trench MOS and SGT MOS Gate Charge Comparison)

(Trench MOS and SGT MOS Characteristic Resistance Comparison)

(Trench MOS and SGT MOS Loss Comparison)

MOSFETs manufactured using SGT technology reduce parasitic capacitance and on-state resistance, improve chip performance, and reduce chip size. Compared to ordinary trench MOSFETs, SGT MOSFETs reduce chip area by more than 40% at the same power consumption. Additionally, SGT MOSFETs can better withstand avalanche breakdown and surge current during avalanche, offering higher power density.

(Applied to synchronous rectification SGT MOS)

With the rise of fast charging for mobile phones, electric vehicles, brushless motors, and mobile energy storage, the demand for medium and low voltage MOSFETs is increasing. SGT MOSFETs, as representatives of medium and low voltage MOSFETs, are widely used in fields such as fast charging for mobile phones, motor drive, and power management systems, becoming core power critical components.

(VBsemi SGT MOS Model Display)

Microgreen Semiconductor's medium and low voltage SGT series products have been widely used in various fields due to their advanced production technology, excellent performance, and good reputation. These products have lower on-state resistance and conduction losses, can reduce the critical field strength of the drift region, and improve the chip's withstand voltage capability. Microgreen Semiconductor will showcase these latest MOSFET product lines, including SGT MOS, flat and trench process MOSFETs, and multi-layer epitaxial superjunction MOSFETs, at the 2023 Munich Shanghai Electronics Exhibition. The exhibition will be held from July 11th to 13th, 2023 at the Shanghai National Convention and Exhibition Center, with Microgreen Semiconductor's booth number being 7.2H-A606.

(Exhibition Floor Plan)

At the exhibition, visitors will have the opportunity to communicate and exchange ideas with technical experts from Microgreen Semiconductor to learn more about SGT MOSFET products and technologies in detail. In addition, Microgreen Semiconductor will also showcase its latest research and development achievements in the field of IGBT and wide bandgap materials.

As a national-level high-tech enterprise, Microgreen Semiconductor has been committed to advancing semiconductor device technology and providing innovative solutions for customers. Their products are reliable in quality, stable in performance, and widely used in power supply, motor control, lighting, and other fields.

Therefore, we sincerely invite both new and old customers to visit Microgreen Semiconductor's booth at the 2023 Munich Shanghai Electronics Exhibition. This will be an excellent opportunity to learn about the latest semiconductor device technologies and trends. We look forward to your visit and to discussing the prospects for development in the field of semiconductor devices with you.