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FDMC6683PZ-VB Product details
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The FDMC6683PZ-VB is a Single P-MOS deeply optimized for low-voltage, high-power switching scenarios. The Trench process balances low switching losses with high reliability, and the DFN8(3X3) package strikes a balance between heat dissipation and board space. The combination of -20V withstand voltage, -52A current carrying capacity, and 4mΩ ultra-low on-resistance makes it an ideal cost-reduction and performance upgrade option to replace traditional DPAK or SOP-8 packaged devices, especially suitable for high-density, high-volume applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | -20V | -1.2V | -52A | 5(mΩ) | 4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | -20V | -1.2V | -52A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | -20V | -1.2V | -52A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-P | MOS |
VDS=-20V: Adapts to 5V/12V low-voltage systems, providing sufficient margin for voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Wide gate drive voltage tolerance, compatible with various negative voltage drive schemes and PMIC/driver chips, reducing the risk of gate overvoltage damage.
Vth=-1.2V (Typical): Low threshold voltage ensures entry into the fully enhanced region even under battery voltage decay or low gate drive conditions, maintaining stable load capacity.
RDS(on)=5mΩ @ VGS=-4.5V; RDS(on)=4mΩ @ VGS=-10V: Ultra-low on-resistance significantly reduces temperature rise under full load, allowing for reduced heat sink copper area.
ID=-52A: Ample continuous current margin to handle peak demands of most portable, communication, and automotive auxiliary loads.
Package DFN8(3X3): Small size, low parasitic parameters, supports high-frequency switching, while saving PCB area and assembly costs.
Domain and module applications：
Portable Device Power Management: Low on-resistance improves boost/buck efficiency, extends battery life, small package aids ultra-thin design.
Power Path Management and High-Side Load Switches: P-MOS structure facilitates high-side switching without needing an additional charge pump, low conduction voltage drop reduces system losses.
Battery Protection Modules: Fast response ensures microsecond-level shutdown during overcurrent/short circuit, low on-resistance reduces self-heating of the protection board.
Low-Voltage Motor Drives: Low PWM switching losses, smoother motor operation, significantly lower controller temperature rise.
Consumer Electronics Control Modules: Wide gate drive voltage range simplifies peripheral design, suitable for high-volume, low-cost products like smart sockets, USB switches.
LED Lighting Drivers: Low conduction voltage drop reduces constant current source power consumption, supports multi-channel parallel connection, improves overall luminaire efficacy.
DC-DC Converters: Effectively reduces losses in synchronous rectification or load-side conversion, improves heavy-load efficiency, facilitates module miniaturization.
Automotive Auxiliary Power Supplies: Voltage margin and wide operating temperature range adapt to 12V automotive bus, high reliability.
Selection Summary: The FDMC6683PZ-VB achieves a balance between performance margin, package size, and system cost. It is a cost-effective general-purpose choice for 20V low-voltage, high-power switching applications, particularly suitable for projects with strict space and thermal requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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