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FDD8780-VB Product details

Product introduction:

The FDD8780-VB is a high-current, low-loss N-Channel MOS transistor in a TO252 package, with 30V withstand voltage and 70A current carrying capacity. Leveraging Trench technology, its on-resistance is as low as 7mΩ (10V drive), resulting in minimal heat generation and excellent efficiency. The gate drive is flexible, with a ±20V wide range, suitable for various low-voltage power control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 70A 9(mΩ) 7(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 70A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 70A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N MOS

Voltage Rating: 30V
Gate Drive Voltage: ±20V
Threshold Voltage: 1.7V
On-Resistance (4.5V drive): 9 mΩ
On-Resistance (10V drive): 7 mΩ
Maximum Current: 70A
Package: TO252

Domain and module applications:


DC-DC Converters → Synchronous rectification, higher efficiency
Battery Charge/Discharge Protection → High-current switching, safe and reliable
Motor Drives → Fast response, strong load capacity
Power Adapters → Low-voltage, high-current output, low temperature rise
Automotive Electronic Auxiliary Power → Shock resistant, stable and durable
Power Tools → High power density, good heat dissipation
LED Lighting Power Supplies → Constant current control, energy efficient
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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