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DMTH6015LDVW-VB Product details
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The DMTH6015LDVW-VB is a Dual N+N MOSFET deeply optimized for low-voltage power switching and synchronous rectification applications. The Trench technology balances low switching losses with high reliability, and the DFN8(3X3)-B package strikes a balance between dual-transistor integration and board area. The combination of 60V voltage rating, 25A current capability, and 28mΩ on-resistance makes it an ideal integrated alternative to dual discrete SOT-23 or SOP-8 solutions, particularly suitable for high-density, high-volume applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-B | Dual-N+N | 60V | 1.7V | 25A | 38(mΩ) | 28(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-B | Dual-N+N | 60V | 1.7V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3)-B | Dual-N+N | 60V | 1.7V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3)-B | Dual-N+N | MOS |
VDS=60V: Suitable for 12V/24V/48V systems, providing ample margin for voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 3.3V~12V logic levels, can be directly driven by MCU/PMIC, eliminating level-shifting circuits.
Vth=1.7V (Typical): Can enter the fully enhanced region even with low-voltage drive, especially suitable for battery voltage decay scenarios.
RDS(on)=28mΩ @ VGS=10V, 38mΩ @ VGS=4.5V: Achieves excellent on-resistance in a dual N+N package, significantly reducing full-load temperature rise, allowing for reduced heatsink copper area.
ID=25A (per transistor): Ample continuous current margin, capable of handling peak demands of most industrial and automotive loads.
Package DFN8(3X3)-B: Dual-transistor integration offers small size and low parasitic parameters, supporting high-frequency switching while saving PCB area and assembly costs.
Domain and module applications：
Synchronous Rectification DC-DC Converters: The dual N+N structure is suitable for half-bridge or push-pull topologies, replacing back-to-back Schottky diodes, improving heavy-load efficiency by 2~3%, aiding module miniaturization.
Battery Protection and BMS: Dual-transistor integration simplifies charge/discharge circuits; fast response ensures microsecond-level shutdown during overcurrent/short circuit; low resistance reduces self-heating of the protection board.
Low-Voltage Motor Drive: Low PWM switching losses result in smoother motor operation and significantly lower controller temperature rise, suitable for power tools and fan drives.
Power Management Unit (PMU): Logic-level direct drive simplifies peripheral circuits; dual-channel complementary output is suitable for buck-boost circuits, ideal for high-density power modules.
LED Lighting Drivers: Low conduction voltage drop reduces constant current source power dissipation; supports multi-channel parallel connection, improving overall luminaire efficacy, suitable for 48V industrial lighting.
Automotive Auxiliary Power: 60V voltage rating margin and wide operating temperature range are suitable for 12V/24V vehicle buses, offering high reliability for DC-DC and load switches.
Selection Summary: The DMTH6015LDVW-VB achieves a balance between dual-transistor integration, performance margin, and system cost. It is a cost-effective, general-purpose choice for 60V low-voltage dual-channel switching applications, especially suitable for projects with strict requirements on space, thermal performance, and assembly efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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