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CSD19537Q3-VB Product details
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** Are you designing a high-power-density industrial power supply or automotive controller where PCB space is limited, yet you need to handle 50A of current and 100V of voltage stress? Ordinary MOSFETs either have high conduction losses or poor thermal performance. The VBsemi CSD19537Q3-VB is designed for exactly this purpose – based on advanced SGT trench technology, it integrates 100V withstand voltage, 50A current capability, and a low on-resistance of 10.5mΩ into a compact DFN8(3X3) package, allowing high-voltage, high-current designs without compromising on heat dissipation or space.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 100V | 2.5V | 50A | 13.5(mΩ) | 10.5(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 100V | 2.5V | 50A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 100V | 2.5V | 50A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | MOS |
- Voltage Rating 100V, covering 48V systems and industrial bus applications, providing ample safety margin
- Gate Drive Range ±20V, compatible with various gate drive circuits, strong immunity to voltage spikes
- Threshold Voltage 2.5V, ensuring reliable turn-on with logic levels, compatible with mainstream controllers
- On-Resistance 13.5mΩ (4.5V drive) / 10.5mΩ (10V drive), extremely low losses
- Maximum Current 50A, unlocking high current potential in a DFN8 package
- Utilizes SGT (Shielded Gate Trench) technology, excellent figure of merit, balanced optimization of switching and conduction losses
**
Domain and module applications：
- High-Power DC-DC Converters / Buck-Boost Modules – Used as synchronous rectifiers or main switches, reducing conduction losses and improving full-load efficiency.
- Motor Drive Controllers (Drones, Power Tools, Robots) – Leverages low on-resistance and 50A high current capability to easily handle stall and transient conditions.
- 48V Telecom Power Supplies / Server Backup Power – Enables efficient power switching in compact spaces, improving thermal management.
- Battery Formation / Aging Test Equipment – High voltage rating and low RDS(on) ensure stability during long-duration, high-current operation.
- Automotive Electronics (Body Control, LED Headlamp Drivers) – Meets stringent requirements of 12V/24V/48V automotive electrical architectures, withstands load dump voltage fluctuations.
- Solar Optimizers / Energy Storage Inverters – Creates low-loss paths on the high-voltage side, improving overall system efficiency.
**In a nutshell:** The CSD19537Q3-VB is not an ordinary power MOSFET; it is the 'efficiency cornerstone' and 'space-saving solution' for your 100V high-voltage, high-current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
