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DMNH4026SSD-13-VB Product details

Product introduction:

The VBsemi DMNH4026SSD-13-VB is a Dual-N+N-channel field-effect transistor belonging to the VBsemi brand product series. This product features a dual N-channel design with high performance and stability, suitable for various power control and regulation applications. Manufactured using Trench technology, it has a drain-source voltage (VDS) of 40V and operates at a gate-source voltage (VGS) of ±20V. The product is packaged in SOP8, suitable for application environments requiring high power density and compact layout. The dual N+N configuration offers greater flexibility in synchronous rectification, half-bridge, and push-pull topologies, effectively simplifying circuit design and improving system efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 40V 2.5V 13A 15(mΩ) 10(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 40V 2.5V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 40V 2.5V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N MOS

- Drain-Source Voltage (VDS): 40V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 2.5V
- On-Resistance (VGS=4.5V): 15 mΩ
- On-Resistance (VGS=10V): 10 mΩ
- Maximum Drain Current (ID): 13A
- Package: SOP8
- Technology: Trench

Domain and module applications:


1. DC-DC Converters: The DMNH4026SSD-13-VB is suitable for synchronous rectification and switching circuits in DC-DC converters. The dual N+N configuration can be conveniently used in half-bridge or full-bridge topologies, reducing conduction losses and improving conversion efficiency.
2. Power Management Modules: In the power stage circuits of servers, communication equipment, and industrial power supplies, this product can serve as an efficient switching device for voltage regulation and power distribution, ensuring stable system operation.
3. Battery Protection and Management Systems: In battery charge/discharge management circuits, the dual-channel MOSFET can be used for charge/discharge switch control, enabling overcurrent and overvoltage protection, improving battery pack safety and service life.
4. Motor Drive Modules: Suitable for low-voltage motor drive circuits such as fans, power tools, and small robot motor controllers, enabling motor start/stop and speed control with low heat generation and high reliability.
5. Load Switches and Power Path Management: In portable devices, consumer electronics, and IoT products, this device can serve as a load switch for power path switching and management, achieving low power consumption and high efficiency.
6. Inverters and UPS Systems: In DC-AC inverters and uninterruptible power supplies, the dual N+N structure is suitable for bridge drive circuits, helping to reduce component count, optimize PCB layout, and increase power density.
7. Automotive Electronic Auxiliary Systems: In vehicle power management, body control modules, and auxiliary drive circuits, this product provides stable switching performance, meeting the reliability and temperature characteristics requirements of automotive electronics.

With its low on-resistance, high current capability, and dual-channel integration advantages, this product is an ideal choice for various medium and low voltage power conversion and control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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