中文
English
CSD87502Q2T-VB Product details
Back to previous pageProduct introduction：
Are you designing a space-constrained power protection or switching circuit, needing to implement dual-channel power path control while hoping for a compact PCB layout and efficient heat dissipation? Ordinary discrete MOSFETs take up a lot of area and have unsatisfactory conduction losses. VBsemi CSD87502Q2T-VB is designed for this – it uses a miniature DFN6(2X2)-B package, integrating two N+N channel MOSFETs internally, providing a 30V withstand voltage, 5.8A current capability, and a low on-resistance of 22mΩ, offering an elegant dual-tube solution for high-density power designs.
File download
Download PDF document
Download now
-B.png)
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN6(2X2)-B | Dual-N+N | 30V | 1.7V | 5.8A | 26(mΩ) | 22(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN6(2X2)-B | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN6(2X2)-B | Dual-N+N | 30V | 1.7V | 5.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN6(2X2)-B | Dual-N+N | 30V | 1.7V | 5.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN6(2X2)-B | Dual-N+N | MOS |
- Withstand Voltage 30V, suitable for low-voltage systems and battery-powered scenarios
- Gate Drive Range ±20V, compatible with 1.8V~12V logic levels
- Threshold Voltage 1.7V, reliable turn-on with low-voltage control signals
- On-Resistance 22mΩ (10V drive) / 26mΩ (4.5V drive), excellent losses even with two tubes in series
- Maximum Current 5.8A, small package carries high current
- Utilizes Trench technology, excellent switching and conduction performance
Domain and module applications：
- Lithium Battery Protection Boards – Dual N-tube series structure suitable for positive or negative protection loops, quickly disconnects during overcurrent/short circuit, protecting cell safety.
- Load Switches / Power Path Management – Enables seamless main/backup power switching in portable devices, low resistance reduces voltage drop, extending battery life.
- DC-DC Synchronous Rectification – DFN6 dual-tube package facilitates layout of half-bridge or synchronous rectification stages, replacing two discrete MOSFETs, improving conversion efficiency.
- Motor Drives / Fan Speed Control – Uses dual N-tube complementary drive for low-power DC motors, achieving smooth speed control and forward/reverse control.
- Smart Locks, IoT Sensor Power Management – Small size, low power consumption, suitable for multi-channel power control with ultra-low standby current.
- Power Tools / Handheld Devices – Completes battery-side switching and protection within limited space, impact resistant, low heat generation.
In a nutshell: CSD87502Q2T-VB is your "dual-channel efficiency expert" for low-voltage, compact designs, delivering powerful switching capability in a miniature package, making power paths simpler and more reliable.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
