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STW26N60M2-VB Product details

Product introduction:

The STW26N60M2-VB is a Single N-MOS deeply optimized for high-voltage power conversion scenarios. It utilizes SJ_Multi-EPI super-junction technology, achieving an excellent balance between switching speed and conduction losses. The TO247 package provides excellent heat dissipation and creepage distance, suitable for high power density, high-reliability industrial-grade applications. The combination of 600V withstand voltage, 26A current capability, and 115mΩ on-resistance makes it an ideal power switch option for high-voltage topologies such as server power supplies, photovoltaic inverters, and charging station modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 600V 3.5V 26A 115(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 600V 3.5V 26A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 600V 3.5V 26A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N MOS

VDS=600V: Suitable for three-phase industrial input, photovoltaic bus, and 400V-class systems, providing sufficient margin for turn-off spikes and surges, enhancing system avalanche capability.
VGS=±30V: Large gate drive voltage margin, compatible with common PWM controllers and gate driver ICs, simplifying drive circuit design.
Vth=3.5V (Typical): Moderate threshold voltage, effectively suppressing false turn-on caused by the Miller effect, enhancing the reliability of high-voltage bridge topologies.
RDS(on)=115mΩ @ VGS=10V: Super-junction technology significantly reduces on-resistance, resulting in low conduction losses under heavy load conditions, allowing for smaller heatsink sizes.
ID=26A: Ample continuous current capability, covering the primary switch requirements of 3kW~6kW class power converters.
Package TO247: Through-hole mounting provides high mechanical strength and low thermal resistance, facilitating efficient heat transfer via heatsinks or metal substrates, suitable for long-term high-load operation.

Domain and module applications:



Switching Power Supplies (SMPS): Low junction capacitance and fast switching characteristics support high-frequency operation, increasing power density and reducing transformer size.
Photovoltaic Inverters: High withstand voltage and low conduction losses contribute to efficient boost stage conversion, improving the overall power generation efficiency of the photovoltaic system.
Charging Stations & Energy Storage Converters: Reliably withstands bus voltage fluctuations, high current capability meets the needs of multi-module parallel expansion for increased capacity.
Motor Drives & Industrial Control: The TO247 package facilitates easy installation, super-junction technology reduces inverter temperature rise, improving the long-term stability of motor controllers.
UPS Uninterruptible Power Supplies: Performs robustly in AC input rectification and inverter stages, voltage margin ensures safe shutdown under abnormal conditions.
High-Voltage DC-DC Converters: Suitable for both hard-switching and soft-switching topologies, low conduction losses benefit improving conversion efficiency and power level.
Power Factor Correction (PFC) Circuits: The combination of 600V withstand voltage and low RDS(on) is suitable for continuous current mode PFC, reducing stress on the boost switch.

Selection Summary: The STW26N60M2-VB, with its high withstand voltage, low on-resistance, and TO247 package advantages, becomes a cost-effective, universal choice for high-voltage, high-power switching applications, particularly suitable for industrial-grade power supply designs with strict requirements on heat dissipation, long-term reliability, and system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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