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STL45N65M5-VB Product details
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The STL45N65M5-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios. It utilizes SJ_Multi-EPI super-junction technology, combining low conduction losses with fast switching capability. The DFN8X8 package achieves a good balance between thermal resistance and footprint. The combination of 650V withstand voltage, 20A current capability, and 160mΩ on-resistance makes it a compact, preferred alternative to traditional TO-220/TO-247 devices in high-voltage AC-DC, photovoltaic inverters, and industrial power supplies, especially suitable for applications with high requirements for power density and thermal efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | MOS |
VDS=650V: Suitable for 220V/380V industrial and grid systems, providing sufficient margin for voltage spikes, enhancing system surge reliability.
VGS=±30V: Wide gate drive window, compatible with various PWM controllers and driver chips, reducing the risk of false turn-on.
Vth=3.5V (Typical): Moderate threshold voltage, strong anti-interference capability, suitable for high-voltage bridge drive scenarios.
RDS(on)=160mΩ @ VGS=10V: Low on-resistance achieved through super-junction technology, significantly reducing full-load losses, simplifying thermal design.
ID=20A: Ample continuous current capability, covering load requirements for medium to high-power switching power supplies and motor drives.
Package DFN8X8: Low parasitic inductance, low thermal resistance, supports high-frequency switching, saves PCB area, and improves EMI characteristics.
Domain and module applications：
Switching Power Supplies (SMPS): The combination of low on-resistance and high withstand voltage effectively improves the efficiency of LLC or flyback topologies, reducing rectifier stage temperature rise.
Photovoltaic Inverters: High voltage margin ensures DC bus fluctuation safety, low losses improve MPPT conversion efficiency, suitable for string power modules.
Industrial Motor Drives: 650V withstand voltage and 20A current capability match three-phase 380V input, low switching losses make the drive more reliable.
EV On-Board Chargers (OBC): Super-junction technology handles high-voltage bus fast switching, DFN8X8 package facilitates miniaturization of on-board power modules.
Power Factor Correction (PFC): Low Qg and low RDS(on) work together to reduce switching losses in the PFC stage, helping meet energy efficiency certifications.
High-Voltage DC-DC Converters: Acts as a primary side switch in isolated topologies, sufficient voltage margin supports high-frequency design, reducing magnetic component size.
UPS Uninterruptible Power Supplies: Ample continuous current margin, voltage margin suitable for battery boost and mains switching scenarios, enhancing system surge immunity.
Selection Summary: The STL45N65M5-VB achieves an optimized balance between high voltage withstand, on-resistance, and package thermal performance. It is a cost-effective, compact choice for 650V high-voltage switching applications, particularly suitable for projects with strict requirements on power density, system efficiency, and thermal management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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