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STL45N60DM6-VB Product details
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The VBsemi STL45N60DM6-VB is a Single N-channel super-junction power field-effect transistor manufactured using SJ_Multi-EPI technology, designed for high-voltage, high-efficiency power conversion and industrial control applications. Its DFN8X8 package offers excellent heat dissipation and low parasitic inductance, suitable for high power density power modules and compact PCB layouts. The device provides stable and reliable switching characteristics within a 650V drain-source voltage range, with a wide gate drive voltage range of ±30V, compatible with various PWM control schemes, facilitating system integration and design optimization.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | MOS |
Drain-Source Voltage (VDS): 650V
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V (Typical)
On-Resistance (VGS=10V): 160mΩ (Typical)
Maximum Drain Current (ID): 20A
Package Type: DFN8X8
Technology: SJ_Multi-EPI (Super-Junction Multi-Epitaxial)
Domain and module applications：
1. Switching Power Supplies (SMPS): Used as the main switch in high-efficiency AC-DC converters, leveraging ultra-low conduction losses and fast switching characteristics to significantly improve overall efficiency, suitable for server power supplies, adapters, and industrial power supplies.
2. Power Factor Correction (PFC) Circuits: Acts as a key switching device in Boost PFC topologies. Its high withstand voltage and low on-resistance help reduce power consumption, meeting high power density design requirements.
3. Photovoltaic Inverters & Energy Storage Systems: Suitable for DC-AC inverter bridge arms and charging/discharging circuits, supporting high-voltage bus input, ensuring stable system operation over a wide voltage range.
4. Electric Vehicle On-Board Chargers (OBC): Used in the high-voltage DC-DC conversion stage of on-board charging modules, utilizing super-junction technology for efficient energy transfer, enhancing overall vehicle range.
5. Industrial Motor Drives: Drives three-phase induction motors or permanent magnet synchronous motors, suitable for frequency converters, servo drives, and industrial pump equipment, supporting high-frequency PWM control.
6. High-Voltage DC-DC Converters: Used in isolated or non-isolated high-voltage conversion circuits for communication base stations, data centers, and new energy fields, reducing switching losses and improving power density.
7. Uninterruptible Power Supplies (UPS): Serves as a power switch in inverter and rectifier stages, ensuring power supply continuity for critical loads, enhancing system overload capability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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