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STL33N65M2-VB Product details
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The STL33N65M2-VB is a Single N-MOS optimized for high-voltage power switching applications, utilizing SJ_Multi-EPI super-junction technology to achieve an excellent balance between on-resistance and switching speed. The DFN8X8 package offers good thermal dissipation and a compact footprint. The combination of 650V withstand voltage, 20A current capability, and 160mΩ on-resistance makes it a preferred alternative to traditional TO-220/TO-247 packages in applications such as switching power supplies, industrial control, and new energy systems, particularly suitable for high power density and high reliability designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | MOS |
VDS=650V: Suitable for three-phase rectification (380VAC) and PFC boost bus voltage, providing sufficient margin for voltage spikes and reducing avalanche breakdown risk.
VGS=±30V: Wide gate drive voltage range, compatible with various PWM controllers and driver ICs, enhancing system noise immunity.
Vth=3.5V (Typical): Moderate threshold voltage with strong noise immunity, suitable for reliable driving in high-voltage environments.
RDS(on)=160mΩ @ VGS=10V: Low on-resistance achieved through super-junction technology, minimizing conduction losses and easing thermal design pressure.
ID=20A: Ample continuous current capability to meet the main switch current requirements of most high-voltage power converters.
Package DFN8X8: Low parasitic inductance, low thermal resistance, supports high-frequency switching, saves PCB area, and facilitates module miniaturization.
Domain and module applications：
Switching Power Supplies: Excellent high-voltage characteristics and low conduction losses improve AC-DC conversion efficiency, suitable for flyback, forward, and LLC topologies.
PFC Power Factor Correction: The super-junction structure reduces conduction and switching losses, aiding in high power density PFC stage design.
Industrial Power Supplies & Charging Stations: 650V withstand voltage and 20A current capability handle wide input voltage ranges and heavy load impacts with high reliability.
Photovoltaic Inverters: Sufficient voltage margin suitable for DC-DC boost or inverter H-bridge topologies after connecting photovoltaic panels.
Motor Drive Auxiliary Power Supplies: Used as a switching tube for high-voltage bus power extraction, low losses reduce control board temperature rise and extend equipment lifespan.
New Energy Vehicle Auxiliary Converters: Meets auxiliary power supply needs for on-board high-voltage buses (400V/800V systems) with reliable wide-temperature operation.
High-Power LED Drivers: Acts as the main switch in high-voltage constant current topologies, low conduction voltage drop supports multi-channel parallel connection, improving overall luminaire efficacy.
Selection Summary: The STL33N65M2-VB achieves an excellent balance between high voltage withstand, on-resistance, thermal management, and package size. It is a cost-effective, universal choice for 650V high-voltage power switching applications, especially suitable for projects with strict requirements on efficiency, power density, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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