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STL33N60M2-VB Product details
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Are you designing a high-power-density AC-DC power supply but struggling with switching losses and heat dissipation under 650V high voltage? Ordinary MOS transistors either lack sufficient voltage tolerance or have high on-resistance. VBsemi STL33N60M2-VB is designed for this – based on SJ_Multi-EPI super-junction technology, it integrates 650V withstand voltage, 20A current carrying capacity, and a typical 160mΩ on-resistance into a DFN8X8 flat package, allowing high-voltage power supply design to no longer compromise between efficiency and size.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | MOS |
- Withstand Voltage 650V, easily handles high-voltage bus fluctuations, providing ample safety margin
- Gate Drive Range ±30V, compatible with various drive circuits, strong anti-interference capability
- Threshold Voltage 3.5V, reliable turn-on at standard levels, no complex level shifting needed
- On-Resistance 160mΩ (at 10V drive), significantly reduces conduction loss, improving overall efficiency
- Maximum Current 20A, flat package can still handle high power output
- Super-junction multi-epitaxial process (SJ_Multi-EPI), optimizes balance between switching speed and conduction characteristics
**
Domain and module applications：
- **Switching Power Supplies/Chargers** – Acts as the main high-voltage switch, effectively reducing conduction and switching losses, improving power conversion efficiency.
- **PFC Power Factor Correction** – Leverages the super-junction's low on-resistance advantage in Boost topology, reducing heat generation and increasing power density.
- **LED Driver Power Supplies** – Stably withstands 650V bus voltage, works with PWM dimming for precise constant current, flicker-free.
- **Industrial AC-DC Auxiliary Power Supplies** – Adapts to wide voltage input, provides reliable power for control circuits, enhancing system surge immunity.
- **Photovoltaic Inverters** – Used in DC-DC boost stages, efficiently handles high-voltage side energy conversion, simplifying thermal design.
- **Electric Vehicle Charging Pile Modules** – Maintains low loss in high-frequency hard-switching scenarios, improving long-term module reliability.
- **Home Appliance Variable Frequency Drives** – Tolerates harsh grid environments, providing stable power switching and protection for motor drives.
In a nutshell: STL33N60M2-VB is not just an ordinary high-voltage MOS transistor; it is your 'super-junction tool' and 'heat dissipation savior' in high-voltage power supply design, balancing efficiency and space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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