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STL33N60DM6-VB Product details
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Still troubled by high conduction loss and difficult heat dissipation in high-voltage power supply design? Let VBsemi STL33N60DM6-VB solve your worries! This N-MOS transistor in DFN8X8 package adopts advanced multi-epitaxial super-junction (SJ_Multi-EPI) technology, with a withstand voltage of up to 650V, yet can carry 20A continuous current, with an on-resistance as low as 160mΩ (@10V), significantly reducing conduction losses in high-voltage systems. The super-junction structure brings faster switching speed and better FOM value, pushing power conversion efficiency to a new level. It is a cost-effective choice for high-voltage applications such as server power supplies, photovoltaic inverters, and charging piles.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | MOS |
Voltage Rating: 650V (ample margin for high-voltage systems, stable and reliable)
Drive Range: ±30V (compatible with 10V/12V/15V drive schemes)
Threshold Voltage: 3.5V (standard threshold, strong anti-interference capability)
Ultra-Low On-Resistance: 160mΩ @ 10V (maintains low loss even under high voltage)
High Current Capability: 20A (DFN8X8 package achieves high power density)
Package: DFN8X8 (low thermal resistance, small size, suitable for compact layouts)
Technology: SJ_Multi-EPI (multi-epitaxial super-junction, fast switching, low loss)
Domain and module applications：
– Six High-Voltage Scenarios, One Solution
Switching Power Supplies: LLC half-bridge/full-bridge conversion, improved efficiency, lower temperature rise
Photovoltaic Inverters: MPPT power stage, high withstand voltage, strong reliability
Charging Pile Modules: High-voltage DC-DC stage, enabling high-power miniaturization
Energy Storage Systems: BMS main circuit switch, stably interrupts fault current
Industrial Drives: Motor inverter circuits, impact-resistant, wide temperature range operation
Communication Power Supplies: 48V/300V conversion, high-density package saves PCB space
STL33N60DM6-VB – High-voltage platform, ultra-low loss, making your power supply design easier!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
