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STL33N60DM2-VB Product details
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Still troubled by losses and heat dissipation in high-voltage switching power supplies? Let VBsemi STL33N60DM2-VB solve your worries! This N-MOS transistor in DFN8X8 package adopts SJ_Multi-EPI super-junction multi-epitaxial technology, with a breakdown voltage of up to 650V, yet can carry 20A continuous current, with an on-resistance as low as 160mΩ @ 10V, excelling in both switching loss and conduction loss. Compared to traditional planar processes, the super-junction structure brings faster switching speed and lower on-resistance, making high-voltage power supply design more efficient and compact. It is a 'high-voltage efficiency weapon' for industrial and new energy applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | MOS |
Voltage Rating: 650V (ample margin for high-voltage applications)
Drive Range: ±30V (compatible with common PWM drive signals)
Threshold Voltage: 3.5V (standard drive level, stable and reliable)
Ultra-Low On-Resistance: 160mΩ @ 10V (significantly reduces conduction loss)
High Current Capability: 20A (small DFN8X8 package, high current output)
Package: DFN8X8 (low thermal resistance, suitable for high-density power layout)
Technology: SJ_Multi-EPI (super-junction multi-epitaxial, fast switching, low loss)
Domain and module applications：
– Six High-Voltage Scenarios, One Solution
Switching Power Supplies: Efficient AC-DC conversion, boosting server and communication power supplies
Photovoltaic Inverters: MPPT and inverter stage driving, improving system power generation efficiency
Energy Storage Systems: Charge/discharge control and protection, ensuring battery pack safety and stability
Industrial Drives: Motor controllers, frequency converters, impact-resistant, high-voltage tolerant
Electric Vehicle Auxiliaries: DC-DC conversion, on-board charging, reliably handling high voltage
High-Voltage Charging Piles: Core component of power modules, efficient heat dissipation, long-lasting durability
STL33N60DM2-VB – High voltage, high current, low resistance, high efficiency, making your power supply design easier!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
