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STL26N65DM2-VB Product details
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Are you designing a high-efficiency, high-power-density switching power supply but facing the dilemma of high conduction loss and difficult heat dissipation in high-voltage MOS transistors? VBsemi STL26N65DM2-VB is designed for this – based on advanced multi-epitaxial super-junction (SJ_Multi-EPI) technology, it perfectly integrates 650V withstand voltage, 20A continuous current capability, and a low on-resistance of 160mΩ into a DFN8X8 package, allowing high-voltage power supply design to no longer compromise between reliability, efficiency, and size.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | MOS |
- Withstand Voltage 650V, meets high-voltage application requirements with ample safety margin
- Gate Drive Range ±30V, compatible with various drive circuit designs
- Threshold Voltage 3.5V, clear switching characteristics, strong anti-interference capability
- On-Resistance 160mΩ (at 10V drive), low loss, minimal temperature rise
- Maximum Current 20A, DFN8X8 package achieves high current density
- Super-junction multi-epitaxial technology: Optimizes the balance between on-resistance and output capacitance, improving switching speed
**
Domain and module applications：
- Switching Power Supplies (SMPS) – Acts as the main high-voltage power stage switch, significantly reducing conduction loss, improving overall efficiency.
- Photovoltaic Inverters – Used in DC-DC boost stages or inverter bridge arms, withstands high voltage input, stable and reliable.
- Electric Vehicle Charging Piles – High withstand voltage and high current characteristics perfectly match auxiliary power supplies and DC-DC modules.
- Industrial Power Supplies / Servo Drives – Provides low-loss power conversion in high-voltage bus environments, enhancing system durability.
- Power Factor Correction (PFC) Circuits – Super-junction structure aids high-frequency design, reducing magnetic component size.
- Energy Storage Battery Charge/Discharge Modules – Supports high-power bidirectional energy conversion, reduces heat generation, improves reliability.
- High-Voltage DC-DC Converters – Performs excellently in both synchronous rectification and hard-switching topologies, replacing traditional high-voltage MOS solutions.
**In a nutshell: STL26N65DM2-VB is not just a high-voltage power transistor; it is the 'super-junction engine' and 'reliability cornerstone' for your high-efficiency power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
