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SI4534DY-T1-GE3-VB Product details
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Struggling with large board space and difficult heat dissipation for dual-channel power switches? Let VBsemi SI4534DY-T1-GE3-VB help! This SOP8 packaged dual N+P complementary MOSFET integrates two power transistors into one, saving space and simplifying circuit design. The Trench process ensures fast switching and low losses; ±60V voltage rating confidently handles industrial and automotive applications. The N-channel 5.3A / P-channel 4.9A current capability combined with low on-resistance makes your power and motor drive solutions more efficient and compact.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | 29/60(mΩ) | 26/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | MOS |
- Voltage Rating: ±60V (Both channels have ample margin, safe and reliable)
- Drive Range: ±20V (Compatible with 3.3V/5V/12V drive, flexible adaptation)
- Threshold Voltage: N-channel 1.8V / P-channel -1.7V (Low-voltage logic can drive directly)
- Ultra-Low On-Resistance: N-channel 26mΩ @10V, P-channel 55mΩ @10V (Low conduction loss, minimal heat generation)
- High Current Capability: N-channel 5.3A / P-channel -4.9A (Complementary output, worry-free drive)
- Package: SOP8 (Standard SMD, suitable for high-density PCB layout)
- Technology: Trench (Fast switching speed, low switching loss)
Domain and module applications：
— Six Popular Scenarios, One Pair Solves All
- Half-Bridge/Full-Bridge Drive: N+P complementary structure simplifies H-bridge circuits, suitable for motor inverters and power stages
- DC-DC Converter: Synchronous rectification or dual-transistor forward, improves conversion efficiency, reduces module size
- Motor Drive: Fans, pumps, power tools, easy forward/reverse control
- Power Management: Load switch, power path switching, low on-resistance reduces voltage drop
- Battery Protection: Dual-channel cooperation enables overcurrent and overvoltage dual protection
- LED Lighting: Constant current drive and dimming control, stable and reliable, flicker-free
SI4534DY — Two Transistors in One, Double the Performance, Making Your Power Design Easier!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
