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QS6J3TR-VB Product details
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The QS6J3TR-VB is a Dual-P+P MOSFET deeply optimized for low-voltage power switching applications. The Trench technology balances low switching losses with high reliability, and the SOT23-6 package strikes a balance between heat dissipation and board area. The combination of -20V voltage rating, -4A current capability, and 75mΩ on-resistance makes it an ideal cost-effective upgrade option to replace traditional SOP-8 or DPAK packages, particularly suitable for high-density, high-volume applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100(mΩ) | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | MOS |
VDS=-20V: Suitable for 5V/12V low-voltage systems, providing voltage margin for scenarios like reverse battery connection or load transients, reducing the risk of avalanche breakdown.
VGS=±12V: Compatible with 1.8V~12V logic levels, can be directly driven by MCU/PMIC, eliminating the need for level-shifting circuits.
Vth=-0.6V (Typical): Ensures full conduction even with low gate drive voltage, particularly useful in battery voltage decay scenarios.
RDS(on)=75mΩ @ VGS=4.5V: The dual P-channel parallel structure effectively reduces on-resistance, significantly lowering temperature rise under full load, potentially reducing the required copper area for heat dissipation.
ID=-4A: Ample continuous current margin to handle peak demands of most portable and automotive auxiliary loads.
Package SOT23-6: Small size, low parasitic parameters, supports high-frequency switching while saving PCB area and placement costs.
Domain and module applications：
Portable Device Power Management: Dual P-channel enables load switching or power path switching; low on-resistance improves system efficiency and extends battery life.
Battery Protection Modules: Fast response ensures microsecond-level shutdown during overcurrent/short circuit; low on-resistance reduces self-heating of the protection board.
Low-Voltage Motor Drives: Low PWM switching losses result in smoother motor operation and significantly lower controller temperature rise.
Consumer Electronics Control Modules: Direct drive by logic levels simplifies peripheral circuits, suitable for high-volume, low-cost products like smart sockets and USB switches.
Load Switching and Power Path Management: Dual channels integrated in SOT23-6 can replace two discrete P-MOSFETs, saving space and reducing BOM cost.
DC-DC Converters: Used for synchronous rectification or load-side switches, can improve heavy-load efficiency by 2~3%, aiding module miniaturization.
Automotive Auxiliary Power Supplies: Voltage margin and wide operating temperature range suit 12V automotive buses, offering high reliability.
Selection Summary: The QS6J3TR-VB achieves a balance between performance margin, package size, and system cost. It is a cost-effective, versatile choice for 20V low-voltage switching applications, especially suitable for projects with strict space and thermal constraints.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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