中文
English
NVC3S5A51PLZT1G-VB Product details
Back to previous pageProduct introduction：
The VBsemi NVC3S5A51PLZT1G-VB is a Single P-channel field-effect transistor belonging to the VBsemi brand product series. This product offers high performance and stability, suitable for various power control and regulation applications. It is manufactured using Trench technology, with a drain-source voltage (VDS) of -60V, and operates within a gate-source voltage (VGS) range of ±20V. The product is packaged in a SOT23-3 package, suitable for application environments requiring efficient and compact designs.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -60V | -1.7V | -5.2A | 52(mΩ) | 50(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -60V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -60V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | MOS |
Drain-Source Voltage (VDS): -60V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): -1.7V
On-Resistance (VGS=4.5V): 52mΩ
On-Resistance (VGS=10V): 50mΩ
Maximum Drain Current (ID): -5.2A
Technology: Trench
Domain and module applications：
1. High-Side Load Switch: The NVC3S5A51PLZT1G-VB is suitable for high-side load switch circuits, such as power path management in portable devices like laptops and tablets, enabling low-loss power distribution and on/off control.
2. Battery Protection Circuit: In lithium battery protection modules, this P-channel MOSFET can be used for switch control in charging and discharging paths, featuring low on-resistance and sufficient current capability, ensuring the safety and reliable operation of the battery system.
3. Power Reverse Polarity Protection: This device is suitable for input power reverse polarity protection circuits, utilizing the characteristics of a P-channel MOSFET to automatically disconnect when the power polarity is reversed, protecting downstream circuits from damage.
4. Consumer Electronics Power Management: In consumer electronic products such as smart homes and wearable devices, the NVC3S5A51PLZT1G-VB can be used in power switches, standby power control modules, etc., helping to reduce power consumption and improve system efficiency.
5. DC-DC Converter Auxiliary Circuit: In DC-DC converters, this model can be used as a load switch or synchronous rectification auxiliary device, supporting high-efficiency, miniaturized power supply designs.
6. Motor Drive Control: Suitable for low-voltage, low-power motor drive modules, such as electric toys, small fans, and automatic valves, used for motor start/stop and speed regulation control.
7. LED Lighting Drive Circuit: In low-voltage lighting applications such as LED strips and indicator lights, this product can be used for constant current or switch dimming control, ensuring stable lamp operation and improving energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
