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NTMT190N65S3HF-VB Product details
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Are you designing a high-power-density industrial power supply or new energy system that needs to handle a 650V high-voltage bus while controlling 20A-level current switching? Ordinary high-voltage MOSFETs often have high on-resistance, leading to bulky heatsinks, while low-voltage devices cannot meet the voltage withstand requirements. The VBsemi NTMT190N65S3HF-VB is designed for this—it uses SJ_Multi-EPI superjunction technology to integrate 650V voltage withstand, 20A current capability, and 160mΩ on-resistance into a compact DFN8X8 package, enabling high-voltage, high-current designs with low losses and small size.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | MOS |
- Voltage withstand: 650V, covering three-phase rectification, PFC, and high-voltage DC-DC scenarios, with ample safety margin
- Gate drive range: ±30V, compatible with various drive circuits, strong anti-interference capability
- Threshold voltage: 3.5V, suitable for standard 10V gate drive, with clear and controllable switching characteristics
- On-resistance: 160mΩ (at 10V drive), significantly reducing conduction losses at high voltage
- Maximum current: 20A, combined with DFN8X8 low thermal resistance package for high power output
- Technology: SJ_Multi-EPI superjunction process, excellent figure of merit (FOM), balanced switching and conduction performance
Domain and module applications：
- Server power supplies / Telecom power supplies – Used as PFC boost switch, improving overall efficiency with low conduction losses and reducing heatsink size.
- New energy vehicle charging stations (DC-DC modules) – Acts as main or auxiliary switch on the high-voltage side, providing stable output with 20A current capability.
- Industrial inverters / Motor drives – Utilizes 650V voltage withstand and low RDS(on) to enhance bus voltage tolerance and reduce switching stress.
- Photovoltaic inverters (string/micro inverters) – Used in Boost circuits or H-bridge topologies for efficient MPPT tracking.
- High-voltage battery charge/discharge management – Acts as a disconnect switch, quickly opening during overvoltage or overcurrent to protect the energy storage system.
- Uninterruptible power supplies (UPS) – Applied in rectifier/inverter stages to improve overload capability and reliability.
- Induction heating / High-power switching power supplies – Leverages SJ_Multi-EPI technology to reduce switching losses, suitable for high-frequency operation.
One-sentence summary: The NTMT190N65S3HF-VB is not an ordinary high-voltage MOSFET; it is the "low-loss core" and "power foundation" for your high-voltage, high-current power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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