中文
English
NTMT190N65S3H-VB Product details
Back to previous pageProduct introduction：
NTMT190N65S3H-VB is a Single N-MOS optimized for high-voltage power conversion scenarios, utilizing SJ_Multi-EPI super-junction multi-epitaxial process technology. It achieves a balance between low on-resistance and low switching losses at a 650V voltage rating. The DFN8X8 package offers excellent heat dissipation and low parasitic parameters, making it suitable for high power density designs. The combination of 20A continuous current and 160mΩ on-resistance makes it a cost-effective solution for server power supplies, industrial power supplies, and new energy inverters.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | MOS |
VDS=650V: Covers typical high-voltage bus scenarios such as three-phase rectification, PFC boost, and LLC half-bridge, providing sufficient voltage margin for spikes and enhancing system reliability.
VGS=±30V: Ample gate drive margin, compatible with 10V~15V conventional drivers, strong anti-interference capability, reducing the risk of false turn-on.
Vth=3.5V (Typical): Moderate threshold voltage, good dv/dt immunity, suitable for complementary drive of upper and lower switches in bridge topologies.
RDS(on)=160mΩ @ VGS=10V: Low on-resistance achieved through super-junction technology, significantly reducing conduction losses under full load, improving power conversion efficiency.
ID=20A: Ample continuous current capability, meeting the primary side or high-voltage side switching requirements of 200W~500W class switching power supplies.
Package DFN8X8: Large bottom-side heat sink pad, low thermal resistance, supporting high-power operation; low parasitic inductance, beneficial for high-frequency switching, saving external heat sink design costs.
Domain and module applications：
Primary Switch in Switching Power Supplies: 650V voltage rating combined with low on-resistance, suitable for flyback and forward topologies, improving overall efficiency and reducing temperature rise.
PFC Power Factor Correction: Low switching losses due to super-junction structure, suitable for continuous conduction mode (CCM) PFC, helping meet high power density standards.
LLC Resonant Converter: Low gate charge and fast switching characteristics, suitable for high-frequency LLC operation, improving efficiency of power modules below 3kW.
Photovoltaic Inverters and Energy Storage Systems: High voltage margin and strong current capability, usable in DC-DC boost stages or H-bridge inverter stages, enhancing overload tolerance.
Motor Drive High-Voltage Section: Suitable for 380V three-phase industrial motor drives, low on-resistance reduces power tube heating, extending drive lifespan.
Industrial Auxiliary Power Supplies: Wide voltage range and high surge capability, suitable for auxiliary power circuits in servo drives and frequency converters.
On-Board Chargers (OBC) and Charging Piles: High reliability of SJ_Multi-EPI process, suitable for high-voltage DC bus and AC-DC conversion units.
Selection Summary: The NTMT190N65S3H-VB achieves an excellent balance between a 650V high-voltage platform, 20A current rating, and DFN8X8 package, making it a cost-effective general-purpose choice for high-voltage switching applications, especially suitable for power conversion projects with strict requirements for efficiency, heat dissipation, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
