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NTMT125N65S3H-VB Product details
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You are designing a high-power-density industrial power supply and need to balance high power output with stringent thermal constraints. Ordinary high-voltage MOSFETs either have high conduction losses or difficult-to-control switching stresses. The VBsemi NTMT125N65S3H-VB is designed for this—it integrates a 650V withstand voltage, 20A current capability, and 160mΩ on-resistance into a robust DFN8X8 package. Using Super Junction (SJ_Multi-EPI) technology, it makes high-voltage, high-power conversion more efficient and reliable.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | MOS |
650V Voltage Rating, easily handling high-voltage applications
±30V Gate Drive Range, compatible with various drive schemes
3.5V Threshold Voltage, standard level for stable turn-on
160mΩ On-Resistance (at 10V drive), significantly reducing conduction losses
20A Maximum Current, outstanding high-current carrying capacity
Super Junction Multi-Epitaxial process, optimizing the balance between breakdown voltage and on-resistance
Domain and module applications：
Industrial Switching Power Supplies – As a high-voltage switch, working with LLC or flyback topologies to effectively improve overall efficiency and reliability.
Photovoltaic Inverters / Energy Storage Systems – Utilizing low on-resistance and high voltage characteristics to reduce power stage losses and improve system temperature rise.
Electric Vehicle On-Board Chargers (OBC) – Acting as the main switch in the high-voltage DC-DC conversion stage, ensuring stable high-power transmission.
Communication Base Station Power Supplies – Withstanding wide voltage fluctuations, providing efficient and robust power conversion for -48V rectifier modules.
PFC Power Factor Correction Circuits – The 160mΩ low RDS(on) combined with the super junction structure reduces losses in Continuous Conduction Mode (CCM) and improves the PF value.
High-Voltage DC-DC Converters – Achieving efficient step-up/down conversion, providing a reliable power stage solution for servers and energy storage equipment.
Motor Drive Inverters – Providing fast, low-loss switching performance in high-voltage variable frequency drives, improving operational smoothness.
Summary: The NTMT125N65S3H-VB is not just an ordinary high-voltage MOSFET; it is the "efficiency cornerstone" and "reliability guarantee" for your high-voltage power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
