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NTMT110N65S3HF-VB Product details
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The VBsemi NTMT110N65S3HF-VB is a Single N-channel field-effect transistor belonging to the VBsemi product series. This product is manufactured using SJ_Multi-EPI super junction technology, featuring a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, designed for high-voltage, high-efficiency power conversion applications. The device uses a DFN8X8 package, balancing heat dissipation with compact PCB layout requirements, suitable for industrial and automotive-grade applications demanding high power density and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | MOS |
- Drain-Source Voltage (VDS): 650V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 160 mΩ
- Maximum Drain Current (ID): 20A
- Package: DFN8X8
- Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
Domain and module applications：
1. Switching Power Supplies (SMPS): The NTMT110N65S3HF-VB is suitable as the main switch tube in high-voltage AC-DC switching power supplies, such as server power supplies, communication power supplies, and industrial adapters, effectively reducing switching and conduction losses to improve power conversion efficiency.
2. Photovoltaic Inverters: In photovoltaic power generation systems, this device can be used in the power stage of DC-AC inverter circuits. Its high voltage capability and low on-resistance help improve inverter reliability and output power quality.
3. Electric Vehicle Charging Modules: Suitable for power conversion units in On-Board Chargers (OBC) and ground DC charging stations. The 650V withstand voltage and 20A current capability meet the design requirements of high-voltage, high-power topologies.
4. Uninterruptible Power Supplies (UPS): In the rectifier, inverter, and bypass circuits of UPS systems, this MOSFET can serve as an efficient power switch, ensuring stable system operation under abnormal grid conditions.
5. Industrial Motor Drives: Used in the power stages of variable frequency drives, servo drives, and industrial control equipment, capable of withstanding bus voltage and achieving fast switching, suitable for motor speed control and energy recovery systems.
6. High-Voltage DC-DC Converters: In scenarios like communication base stations, energy storage systems, and railway auxiliary power supplies with high-voltage buses, this device can be applied in resonant converters or synchronous rectification circuits to increase power density.
7. Power Electronics Protection and Switching Circuits: Can be used in high-voltage DC circuit breakers, battery charge/discharge management, and load switch modules, leveraging super junction technology for low losses and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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