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MCQ4559A-TP-VB Product details
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The VBsemi MCQ4559A-TP-VB is a Complementary Dual-N+P channel field-effect transistor manufactured using Trench technology, integrating N-channel and P-channel devices into an SOP8 package, providing a high-density solution for medium and low-voltage power conversion and load control. The device supports ±60V drain-source voltage, suitable for various industrial and consumer electronics applications; the complementary structure simplifies half-bridge, push-pull, and synchronous rectification circuit designs, helping to reduce system size and increase power density. Its gate drive is compatible with common logic levels, facilitating direct interfacing with MCUs or dedicated driver ICs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | 29/60(mΩ) | 26/55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | ±60V | 1.8/-1.7V | 5.3/-4.9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOP8 | Dual-N+P | MOS |
- Configuration: Dual-N+P (N-channel + P-channel complementary pair)
- Drain-Source Voltage (VDS): ±60V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): N-channel typical 1.8V; P-channel typical -1.7V
- On-Resistance (VGS=4.5V): N-channel 29mΩ (typical); P-channel 60mΩ (typical)
- On-Resistance (VGS=10V): N-channel 26mΩ (typical); P-channel 55mΩ (typical)
- Maximum Drain Current (ID): N-channel 5.3A; P-channel -4.9A
- Package: SOP8
- Technology: Trench
Domain and module applications：
1. Half-Bridge/Full-Bridge Driver Circuits: Utilizes the complementary N+P architecture to simplify power stage design, suitable for motor drives, audio amplifiers, and push-pull topologies in switching power supplies.
2. Synchronous Rectification DC-DC Converters: The N/P channel combination optimizes Buck/Boost synchronous rectification paths, reducing conduction losses and improving conversion efficiency.
3. Battery Charge/Discharge Management: Used for charge/discharge circuits in portable devices and energy storage systems, implementing overcurrent, overvoltage protection, and load on/off control.
4. Load Switches and Power Path Management: Enables sequential control and intelligent power distribution for multiple power rails in servers and communication equipment.
5. Motor Drive Modules: Drives small DC brushless or brushed motors, supporting PWM speed control, suitable for fans, pumps, and automation equipment.
6. Inverter and UPS Auxiliary Power Supplies: Provides reliable switching performance within the ±60V voltage range, used for auxiliary flyback or push-pull power stages.
7. Industrial Control Interfaces: Acts as a power switch for PLC and sensor output stages, working with logic circuits for isolated or non-isolated driving.
With its complementary integration, low on-resistance, and standard SOP8 package, this device offers designers a flexible, compact, and efficient power switching solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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