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AP40N03H-VB Product details

Product introduction:

The AP40N03H-VB is a high-current, low-loss N-channel MOSFET in a TO252 package, with a 30V withstand voltage and 70A current carrying capacity. Leveraging Trench technology, it achieves a low on-resistance of 7mΩ (at 10V drive), resulting in low heat generation and high efficiency. The gate drive is flexible with a wide ±20V range, suitable for various low-voltage power control scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 70A 9(mΩ) 7(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 70A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 70A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N MOS

Voltage Rating: 30V
Drive Voltage: ±20V
Threshold Voltage: 1.7V
On-Resistance (4.5V drive): 9 mΩ
On-Resistance (10V drive): 7 mΩ
Maximum Current: 70A
Package: TO252
Technology: Trench

Domain and module applications:


DC-DC Converters → Synchronous rectification for better efficiency
Power Tools, Motor Drives → High current output, strong power
Battery Charge/Discharge Protection → Low internal resistance, safe, reliable, extends lifespan
Automotive Power Systems → High temperature and vibration resistance, stable power supply
Power Adapters, Fast Chargers → Low switching losses, minimal temperature rise
Battery Management Systems (BMS) → Clean switching, supports high-power applications
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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