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SIA449DJ-T1-GE3-VB Product details
Back to previous pageProduct introduction：
The VBsemi SIA449DJ-T1-GE3-VB is a Single P-channel field-effect transistor, part of the VBsemi brand product series. This product utilizes advanced Trench technology, offering excellent switching characteristics and low on-resistance, suitable for various power management and load control applications. The device supports a drain-source voltage (VDS) of -30V, a gate-source voltage range of ±20V, and is packaged in DFN6 (2X2), providing excellent thermal performance and space utilization advantages in compact circuit designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN6(2X2) | Single-P | -30V | -1.7V | -10A | 20(mΩ) | 17(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN6(2X2) | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN6(2X2) | Single-P | -30V | -1.7V | -10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN6(2X2) | Single-P | -30V | -1.7V | -10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN6(2X2) | Single-P | MOS |
- Drain-Source Voltage (VDS): -30V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): -1.7V
- On-Resistance (VGS=4.5V): 20 mΩ
- On-Resistance (VGS=10V): 17 mΩ
- Maximum Drain Current (ID): -10A
- Technology: Trench
Domain and module applications：
1. Load Switch Circuits: The SIA449DJ-T1-GE3-VB is suitable for various high-side load switches, such as switch control in portable devices and peripheral interface power management, effectively reducing conduction losses and improving system efficiency.
2. Battery Protection Modules: In lithium-ion battery charge/discharge management systems, this P-channel MOSFET can be used as a protection switch to achieve overcurrent and over-discharge protection, ensuring safe and reliable battery pack operation.
3. Power Path Management: This product is suitable for dual power supply switching, USB power distribution, and backup power management circuits, offering low on-resistance and compact package advantages for miniaturized design.
4. Low-Voltage Motor Drive Modules: Can be used in driving circuits for small DC brushed motors, vibration motors, and toy motors, enabling motor start/stop and speed control functions.
5. Consumer Electronics Control Modules: In consumer electronic products like smart sockets, LED light control switches, and electronic cigarettes, this device can serve as a power switch, providing stable on/off control for the equipment.
6. DC-DC Converters: In buck or boost converters, the SIA449DJ-T1-GE3-VB can be used for synchronous rectification or auxiliary switching, helping to improve conversion efficiency and power density.
7. Automotive Auxiliary Power Systems: Suitable for power switches in power supply circuits for automotive infotainment systems, dashcams, and sensors, providing reliable load isolation and overcurrent protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
