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CSD17579Q3AT-VB Product details
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The CSD17579Q3AT-VB is a Single N-MOSFET deeply optimized for low-voltage, high-power-density switching applications. The Trench technology balances extremely low conduction losses with fast switching capability. The DFN8(3X3) package achieves an excellent balance between heat dissipation performance and board footprint. The combination of 30V withstand voltage, 30A current capability, and 13mΩ on-resistance makes it an ideal high-performance alternative to traditional DPAK or SOP-8 packaged devices, especially suitable for high-current, high-density, high-volume applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 30V | 1.7V | 30A | 19(mΩ) | 13(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 30V | 1.7V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | 30V | 1.7V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8(3X3) | Single-N | MOS |
VDS=30V: Suitable for 5V/12V/24V systems, provides ample margin for voltage spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with a wide range of logic level drives, can be directly connected to MCU/PMIC, simplifying gate drive design.
Vth=1.7V (typical): Effectively turns on under low-voltage drive, suitable for battery-powered and low-voltage logic scenarios.
RDS(on)=13mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces temperature rise under full load, reduces copper area for heat dissipation, improves system efficiency.
RDS(on)=19mΩ @ VGS=4.5V: Maintains low impedance even under low-voltage drive, suitable for direct drive by 5V logic.
ID=30A: Strong continuous current capability, can easily handle peak demands of high-current loads like motors and power supplies.
Package DFN8(3X3): Miniaturized package, low parasitic inductance, supports high-frequency switching, saves PCB area and optimizes thermal path.
Domain and module applications：
DC-DC Converters: Replaces Schottky diodes in synchronous rectification. Extremely low on-resistance significantly improves heavy-load efficiency, facilitating power module miniaturization.
Low-Voltage Motor Drives: 30A high current capability combined with low switching losses makes motor operation smoother and significantly reduces controller temperature rise.
Battery Protection Modules: Milliohm-level internal resistance reduces self-heating of the protection board. Fast response characteristics ensure reliable shutdown during overcurrent/short circuit.
Power Tools and Industrial Control: High current capability and voltage margin meet the requirements of impact loads, improving system robustness.
Portable Device Power Management: Low impedance improves buck-boost conversion efficiency. Small package aids ultra-thin, high-density designs.
Automotive Auxiliary Power: 30V withstand voltage and wide operating temperature range adapt to 12V vehicle bus, reliably handling battery voltage fluctuations.
Power Path Management: Low conduction voltage drop reduces on-state losses, suitable for high-current load switches and hot-swap applications.
Selection Summary: The CSD17579Q3AT-VB achieves an excellent balance between high current, low on-resistance, and small package size. It is a high-performance general-purpose choice for 30V low-voltage, high-power-density applications, especially suitable for projects with strict requirements on efficiency, temperature rise, and board-level space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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