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VBGQTA1101 Product details

Product introduction:

The VBGQTA1101 is a Single N-MOS deeply optimized for high-power, high-density switching applications. It utilizes advanced SGT (Shielded Gate Trench) technology to achieve an excellent balance between ultra-low on-resistance and high-speed switching capability. The TOLT-16 package offers excellent heat dissipation paths and high current carrying capability. Combined with 100V voltage tolerance, 415A continuous current, and 1.2mΩ typical on-resistance, it becomes a high-performance core device for high-voltage, high-current power systems, motor drives, and energy storage conversion applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TOLT-16 Single-N 100V 3V 415A 1.2(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TOLT-16 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TOLT-16 Single-N 100V 3V 415A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TOLT-16 Single-N 100V 3V 415A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TOLT-16 Single-N MOS

VDS=100V: Suitable for 48V/72V/96V systems and industrial bus voltages, providing ample voltage margin for voltage spikes, significantly enhancing system avalanche ruggedness.
VGS=±20V: Compatible with a wide range of gate drive voltages, supporting standard 10V~15V drives, can directly interface with dedicated drivers or PMICs, simplifying gate drive circuit design.
Vth=3V (Typical): Moderate threshold voltage effectively suppresses dv/dt-induced false turn-on, while ensuring full conduction under strong drive, improving system noise immunity.
RDS(on)=1.2mΩ @ VGS=10V: Extremely low on-resistance, resulting in minimal conduction losses under high current conditions, significantly reducing device temperature rise, potentially reducing or eliminating complex cooling structures.
ID=415A: Massive continuous current capability, meeting the peak demands of high-power density converters, high-power motors, and other high-stress loads, providing ample design margin.
Package TOLT-16: Low parasitic inductance, low thermal resistance package, supports high-current fast switching, while optimizing PCB layout area, suitable for multi-module parallel connection to scale power levels.

Domain and module applications:


High-Power DC-DC Converters: Ultra-low on-resistance significantly improves heavy-load efficiency. In synchronous rectification applications, it can replace multiple paralleled MOSFETs, reducing component count and board space.
Energy Storage and Battery Formation Equipment: 100V voltage tolerance is compatible with multi-cell lithium battery packs. SGT technology ensures low losses during fast switching, aiding high-precision current control.
Electric Vehicle Power Management: 415A current capability adapts to high-power loads like main drive controllers and auxiliary inverters, enhancing system overload robustness.
Server/Telecom Power Supplies: Serves as the core power switch in high-efficiency synchronous rectification topologies, reducing conversion losses, increasing power density, meeting stringent data center energy efficiency requirements.
Industrial Motor Drives: Low RDS(on) reduces heat generation, high current margin handles stall or startup surges, improving long-term driver reliability.
UPS and Photovoltaic Inverters: Balances 100V voltage tolerance and low conduction losses, suitable for battery-side buck-boost and high-frequency bus conversion, improving overall system efficiency.
High-Power Load Switches and Protection Circuits: Wide Safe Operating Area (SOA) and low voltage drop characteristics support high-current on/off applications like hot-swap, battery backup, and power redundancy.

Selection Summary: The VBGQTA1101, with its 100V voltage tolerance, 415A massive current, 1.2mΩ ultra-low on-resistance, and SGT technology, provides a flagship-level power switch solution for high-power, high-density applications. Its TOLT-16 package balances heat dissipation and low parasitic parameters, making it particularly suitable for industrial power, new energy, and motor drive projects with extremely high demands on efficiency, temperature rise, and system compactness.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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