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IAUTN12S5N018TATMA1-VB Product details
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The VBsemi IAUTN12S5N018TATMA1-VB is a Single N-Channel Field Effect Transistor belonging to the VBsemi product series. This product is manufactured using advanced SGT (Split Gate Trench) technology, featuring extremely low on-resistance and excellent current carrying capability, suitable for high-power, high-efficiency power conversion and control applications. The device supports a drain-source voltage (VDS) of 100V and operates reliably within a gate-source voltage (VGS) range of ±20V. This product is packaged in TOLT-16, suitable for high-current applications requiring high thermal dissipation and a compact layout.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | 100V | 3V | 415A | 1.2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | 100V | 3V | 415A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | 100V | 3V | 415A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | MOS |
Drain-Source Voltage (VDS): 100V
Gate-Source Voltage (VGS): ±20V
Threshold Voltage (Vth): 3V
On-Resistance (VGS=10V): 1.2 mΩ
Maximum Drain Current (ID): 415A
Technology: SGT
Domain and module applications：
1. High-Power DC-DC Converters: The IAUTN12S5N018TATMA1-VB can be used in high-power density DC-DC conversion modules such as server and telecom power supplies, serving as a synchronous rectifier or switching transistor. Its ultra-low on-resistance of 1.2mΩ significantly reduces losses, improving conversion efficiency.
2. Electric Vehicle Power Management: In Battery Management Units (BMS) and motor drive controllers for electric vehicles, e-bikes, and hybrid systems, this device can be used for high-current charging/discharging circuits and power switches, ensuring high reliability and long-term stable operation.
3. Motor Drive Modules: Suitable for industrial motor drives, drone ESCs, and high-power fan drive modules, supporting peak currents up to 415A, effectively controlling motor start/stop, speed regulation, and reversing, meeting high overload capacity requirements.
4. Energy Storage and Inverter Systems: In photovoltaic inverters, Power Conversion Systems (PCS), and UPS uninterruptible power supplies, this MOSFET can serve as a high-frequency switching device for power conversion and inverter bridge circuits, enhancing system overcurrent capability and thermal reliability.
5. Automotive Electronic Systems: For on-board 12V/48V electrical systems, it can be used in auxiliary power supplies, DC-DC converters, Electric Power Steering (EPS), and high-efficiency lighting driver modules, providing stable switching performance in harsh temperature environments.
6. High-Current Load Switches: Suitable for on/off control of high-power loads in servers, data centers, and industrial equipment, utilizing 100V voltage tolerance and extremely low on-resistance for low-heat, high-safety power management.
7. Welding Equipment and Power Tools: In applications requiring high-speed switching of large currents, such as inverter welders and industrial power tools, this device provides robust power support, enhancing equipment durability and work efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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