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DMTH10H1M5STTWQ-VB Product details

Product introduction:

The DMTH10H1M5STTWQ-VB is a Single N-MOSFET deeply optimized for high-power switching scenarios. Utilizing SGT (Shield Gate Trench) technology, it achieves an excellent balance between extremely low on-resistance and fast switching capability. The TOLT-16 package offers excellent thermal paths and low parasitic inductance, making it suitable for high current density, high-reliability industrial applications. The powerful combination of 100V withstand voltage, 415A current-carrying capacity, and 1.2mΩ on-resistance makes it a core power component selection for high-power DC-DC converters, motor drives, and energy storage systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TOLT-16 Single-N 100V 3V 415A 1.2(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TOLT-16 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TOLT-16 Single-N 100V 3V 415A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TOLT-16 Single-N 100V 3V 415A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TOLT-16 Single-N MOS

- VDS=100V: Covers 48V/60V/80V system buses, providing ample headroom for voltage spikes, significantly reducing the risk of avalanche breakdown.
- VGS=±20V: Compatible with a wide range of gate drive voltages, adapting to various controllers and driver ICs, simplifying gate drive design.
- Vth=3V (Typical): Moderate threshold voltage, strong noise immunity, while ensuring sufficient conduction under strong drive, suitable for industrial control environments.
- RDS(on)=1.2mΩ @ VGS=10V: Ultra-low on-resistance, drastically reducing conduction losses, significantly lowering full-load temperature rise, potentially reducing the number of parallel devices.
- ID=415A: Extremely ample continuous current capability, capable of handling severe conditions like high-power motor startup, short-circuit transients, and heavy load surges.
- Package TOLT-16: Top-side cooling structure optimizes thermal resistance, supporting dual-sided cooling designs, while low package resistance and inductance benefit high-frequency, high-current applications.

Domain and module applications:


- High-Power DC-DC Converters: The 1.2mΩ ultra-low on-resistance pushes the efficiency of synchronous rectification and buck/boost topologies near their limits, benefiting module power density.
- Motor Drives & Servo Control: The 415A current margin combined with low voltage drop meets the transient high-current demands of high-power motors, enabling more reliable temperature control.
- Energy Storage & Battery Formation Equipment: High withstand voltage and low loss characteristics suit bidirectional charging/discharging circuits, improving system cycle efficiency.
- Automotive Electronics & Vehicle Power Supplies: The 100V withstand voltage covers 12V/24V/48V automotive buses, and SGT technology ensures stable performance at high switching frequencies.
- Server & Telecom Power Supplies: Meets the requirements of high-power density rectifier modules for low conduction impedance and efficient heat dissipation, reducing the number of parallel MOSFETs.
- Industrial UPS & Inverters: High surge capability enhances system impact resistance, and the TOLT-16 package simplifies high-current trace design.
- Power Tools & Electric Vehicles: High current drive capability ensures no derating under heavy load, extending equipment continuous operation time.

Selection Summary: The DMTH10H1M5STTWQ-VB offers the ultimate on-resistance and current capability in the 100V voltage class. Combined with SGT technology and the TOLT-16 package, it perfectly balances efficiency, thermal performance, and reliability. It is a flagship general-purpose choice for high-power, high-density switching applications, especially suitable for projects with stringent loss and temperature rise requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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