中文
English
IPTC014N08NM5-VB Product details
Back to previous pageProduct introduction：
The IPTC014N08NM5-VB is a Single N-MOSFET deeply optimized for high-power, high-density switching applications. Utilizing advanced SGT (Split Gate Trench) technology, it achieves an excellent balance between ultra-low on-resistance and switching speed. The TOLT-16 package offers superior heat dissipation paths and low parasitic inductance, suitable for continuous high-current operation. The ultimate combination of 100V withstand voltage, 415A current-carrying capacity, and 1.2mΩ on-resistance makes it the preferred power device for heavy-load applications like server power supplies, energy storage converters, power tools, and automotive electronics.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | 100V | 3V | 415A | 1.2(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | 100V | 3V | 415A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | 100V | 3V | 415A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TOLT-16 | Single-N | MOS |
VDS=100V: Covers 48V/60V/80V system buses, providing ample voltage spike margin for inductive load switching, effectively enhancing system avalanche ruggedness.
VGS=±20V: Compatible with 10V~12V standard gate drives, can be directly driven by dedicated gate driver chips or PWM controllers, simplifying driver circuit design.
Vth=3V (Typical): Moderate threshold voltage, strong noise immunity, while ensuring full low-resistance conduction state under 10V drive.
RDS(on)=1.2mΩ @ VGS=10V: Milliohm-level on-resistance, extremely low full-load loss, significantly reducing device temperature rise, allowing for substantial heatsink size reduction.
ID=415A: Excellent continuous current capability, meeting peak and continuous load demands of high-power motors, battery packs, and high-frequency inverters.
Package TOLT-16: Top-side cooling design, low thermal resistance, supports high-current multi-pin paralleling, and low parasitic inductance beneficial for high-frequency, efficient operation.
Technology SGT: Shielded gate structure reduces Miller capacitance, lower switching losses, stronger EMI immunity, suitable for hard-switching and soft-switching topologies.
Domain and module applications：
Server and Telecom Power Supplies: Ultra-low on-resistance improves synchronous rectification efficiency, reducing power stage losses, aiding the design of high-power-density power modules.
Energy Storage and Battery Formation Equipment: High current carrying capacity combined with low voltage drop meets long-term full-load operation of charge/discharge circuits, reducing system temperature rise.
Power Tools and Garden Machinery: High withstand voltage margin handles battery back-EMF surges. Low impedance guarantees high torque output, improving overall machine runtime and reliability.
Automotive DC-DC Converters: 100V withstand voltage adapts to 12V/24V/48V vehicle buses. SGT technology ensures clean waveforms under high-frequency switching, better electromagnetic compatibility.
Motor Drive Inverters: 415A continuous current covers industrial fans, pumps, and light electric vehicle drives. Low PWM switching losses significantly reduce controller thermal stress.
Solar Optimizers and Microinverters: Milliohm-level on-resistance reduces boost/inverter stage losses, improving MPPT efficiency. TOLT-16 package facilitates compact power board layout.
High-Power UPS: High-frequency design combined with low conduction loss significantly reduces magnetic component size, improving overall system overload capability and reliability.
Selection Summary: The IPTC014N08NM5-VB sets a performance benchmark in high-power switching applications with its 100V withstand voltage, 1.2mΩ ultra-low on-resistance, and 415A high current capability. The TOLT-16 package and SGT technology synergistically optimize thermal resistance and switching characteristics, making it an ideal core device for high-efficiency, high-power-density projects, especially suited for cutting-edge applications with strict requirements on temperature rise, size, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
