SI6925ADQ-T1-GE3-VB Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | 17(mΩ) | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | MOS |
Voltage Rating: 20V
Drive Voltage: ±12V
Threshold Voltage: 0.86V
On-Resistance: 17mΩ (2.5V drive), 12mΩ (4.5V drive), 11mΩ (10V drive)
Maximum Current: 7.5A
Package: TSSOP8
Configuration: Dual N+N
Technology: Trench
Domain and module applications:
Lithium Battery Protection → Dual-transistor parallel design, strong current handling capability, more reliable safety cutoff
DC-DC Converters → Synchronous rectification low-side, small on-resistance, significant efficiency improvement
Mobile Device Power Supply → Friendly to low-voltage drive, suitable for 2.5V/4.5V logic control
Power Path Management → Dual-channel independent control, enabling load switch and OR-ing functions
Motor Drive → Small power motor speed control, fast response, low heat generation
LED Lighting Control → Precise constant current dimming, low switching losses
Portable Electronic Devices → TSSOP8 small package, saves PCB space, suitable for compact designs
Technical support:
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