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PMWD16UN-VB Product details
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**Are you designing a compact lithium battery-powered device where PCB area is at a premium, yet you need a dual-channel power switch for charging/discharging path switching or synchronous rectification? Discrete MOS transistors take up too much space and complicate routing. VBsemi PMWD16UN-VB is designed for this exact need—it integrates two N-channel MOSFETs in a TSSOP8 package, offering a 20V voltage rating, 7.5A current capability, and an ultra-low on-resistance of only 12mΩ at 4.5V drive, making high-density dual-channel power supply design simple and efficient.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | 17(mΩ) | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | MOS |
- Voltage Rating 20V, suitable for low-voltage battery and load management scenarios
- Gate drive range ±12V, compatible with 2.5V~10V logic levels
- Threshold voltage 0.86V, easily turned on with low-voltage direct drive
- On-Resistance: 17mΩ (2.5V drive), 12mΩ (4.5V drive), 11mΩ (10V drive), losses decrease further with higher drive voltage
- Maximum current 7.5A, dual N+N configuration saves the space of one discrete MOS transistor
- Uses Trench technology, excellent switching performance, low on-resistance
**
Domain and module applications：
- Lithium Battery Protection Board – Dual-channel structure suitable for independent control of charging and discharging circuits, fast disconnection during overcurrent or short circuit, protecting cell safety.
- Power Banks / Fast Charging Modules – Acts as a battery-side switch or load switch, low on-resistance reduces heat generation, enabling thinner and lighter devices.
- DC-DC Synchronous Rectification – Replaces two Schottky diodes in buck or buck-boost topologies, improving conversion efficiency and reducing board area.
- Load Switches / Power Path Management – Dual independent control suitable for multi-battery power systems or passive OR-ing circuits.
- Handheld Devices / IoT Terminals – Low threshold voltage supports 2.5V drive, suitable for single-cell lithium battery power scenarios.
- Motor Drives / Power Tools – Dual N+N for H-bridge low-side or half-bridge drive, 7.5A continuous current meets medium and small power motor requirements.
- Smart Locks / Sensor Power Supply – Reliable power switching, ensuring low standby power consumption and instantaneous high current are not in conflict.
In a nutshell: The PMWD16UN-VB is not just an ordinary dual-channel MOS transistor; it is the 'dual-channel integration expert' and 'efficiency optimizer' for your compact low-voltage power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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