SI6966DQ-T1-GE3-VB Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | 17(mΩ) | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | MOS |
- Voltage Rating: 20V
- Drive Voltage: ±12V
- Threshold Voltage: 0.86V
- On-Resistance: 17mΩ (2.5V drive), 12mΩ (4.5V drive), 11mΩ (10V drive)
- Maximum Current: 7.5A
- Package: TSSOP8
- Configuration: Dual N+N Channel
- Technology: Trench
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Domain and module applications:
- Power banks, handheld device power supply → Dual-transistor synchronous buck-boost, high efficiency
- Battery charging/discharging protection → Precise cutoff, safe and reliable
- Small motor drive → Dual-transistor complementary, flexible commutation
- Smart sockets, USB switches → Low on-resistance, clean switching
- LED strip dimming → Linear regulation, uniform brightness
- DC-DC modules → Synchronous rectification, lower losses
- Portable device power management → Small package, high integration, saves space
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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