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SI6966DQ-T1-E3-VB Product details
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Troubled by the large board area and high conduction losses of dual low-voltage switch circuits? Let VBsemi SI6966DQ-T1-E3-VB solve your problem! This TSSOP8 packaged Dual-N+N dual N-channel MOS transistor integrates two independent MOSFETs, replacing a dual discrete solution with a single chip, saving PCB space. With 20V withstand voltage, 7.5A continuous current capability, and an ultra-low on-resistance of 11mΩ (@10V), it generates minimal heat and offers high efficiency. Trench technology ensures excellent switching characteristics, making it suitable for various low-voltage power management and load switching scenarios, an ideal choice for compact designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | 17(mΩ) | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | MOS |
Voltage Rating: 20V (covers portable and low-voltage system applications)
Drive Range: ±12V (compatible with low-voltage logic drives)
Threshold Voltage: 0.86V (ultra-low threshold, can be directly driven by 1.8V/2.5V logic)
Ultra-Low Resistance: 17mΩ @2.5V, 12mΩ @4.5V, 11mΩ @10V (extremely low losses across the voltage range)
High Current Capability: 7.5A (dual channels in parallel can handle higher current)
Package: TSSOP8 (miniaturized dual-channel package, suitable for high-density mounting)
Domain and module applications：
— Six Hot Scenarios, One Chip Solves Them All
Portable Power: Power banks, fast charging auxiliary switches, reduce losses, extend battery life
Battery Protection: Dual-channel battery charge/discharge management, precise fault current cutoff
Load Switches: Dual-channel independent control of peripheral power supplies, simplifies circuit design
DC-DC Conversion: Synchronous rectification low-side, improves conversion efficiency
Motor Drives: Small fans, pump motors, more flexible dual H-bridge drive
Smart Hardware: USB switches, smart home control, fast response, saves board space
SI6966DQ-T1-E3-VB — The dual MOS integrated solution makes your low-voltage power supply design more compact and efficient!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
