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Si6966DQ-VB Product details
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Si6966DQ-VB is a Dual N+N MOSFET deeply optimized for low-voltage power switching scenarios. Trench technology balances low switching losses and high reliability, while the TSSOP8 package strikes a balance between heat dissipation and board area. The combination of 20V withstand voltage, 7.5A current capability, and 11mΩ on-resistance makes it an ideal integrated alternative to discrete single-transistor solutions in high-density power management and portable devices, especially suitable for space-constrained, high-volume applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | 17(mΩ) | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | MOS |
VDS=20V: Suitable for 5V/12V low-voltage systems, providing margin for switching node spikes, reducing breakdown risk.
VGS=±12V: Compatible with 2.5V~10V logic level drives, can be directly connected to MCU/PMIC, simplifying peripheral design.
Vth=0.86V (Typical): Can enter the fully conductive region under low-voltage drive, suitable for battery voltage decay scenarios.
RDS(on)=11mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces full-load temperature rise, can reduce heat dissipation copper area; still as low as 17mΩ at 2.5V drive, offering clear advantages in low-voltage applications.
ID=7.5A: Ample continuous current capability to handle peak demands of most portable and automotive auxiliary loads.
Package TSSOP8: Integrated dual N+N channels, small size, low parasitic parameters, supports high-frequency switching, while saving PCB area and assembly costs.
Domain and module applications：
Portable Device Power Management: Dual-channel integration suitable for synchronous boost/buck topologies, low internal resistance improves conversion efficiency, extends battery life.
Battery Protection Modules: Dual MOSFET series structure facilitates bidirectional charge/discharge protection, microsecond shutdown capability, low self-heating.
Low-Voltage Motor Drives: Low PWM switching losses, dual channels can form H-bridge half-arms, smoother motor operation, lower controller temperature rise.
Consumer Electronics Control Modules: Logic-level direct drive simplifies peripherals, suitable for high-volume, low-cost products like smart sockets, USB switches.
DC-DC Converters: Replaces two Schottky diodes or single transistors in synchronous rectification, significantly improves heavy-load efficiency, facilitates module miniaturization.
Load Switches: Dual-channel independent control, suitable for multi-rail power sequencing management, low conduction voltage drop reduces system power consumption.
Selection Summary: Si6966DQ-VB achieves a balance between performance margin, dual-channel integration, and system cost. It is a cost-effective general-purpose choice for 20V low-voltage switching applications, particularly suitable for projects with strict requirements on space, power consumption, and BOM simplification.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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