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SI6954ADQ-T1-E3-VB Product details
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VBsemi SI6954ADQ-T1-E3-VB is a Dual N+N channel field-effect transistor belonging to the VBsemi brand product series. This product is manufactured using advanced Trench technology, featuring low on-resistance, high current capability, and excellent thermal stability, making it suitable for various power control and power management applications. It has a drain-source voltage (VDS) of 20V and operates at a gate-source voltage (VGS) of ±12V. The package is TSSOP8, suitable for compact circuit board designs, meeting the needs of high-density integration and high-efficiency conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | 17(mΩ) | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | MOS |
- Drain-Source Voltage (VDS): 20V
- Gate-Source Voltage (VGS): ±12V
- Threshold Voltage (Vth): 0.86V
- On-Resistance (VGS=2.5V): 17 mΩ
- On-Resistance (VGS=4.5V): 12 mΩ
- On-Resistance (VGS=10V): 11 mΩ
- Maximum Drain Current (ID): 7.5A
- Technology: Trench
Domain and module applications：
1. Portable Device Power Management: SI6954ADQ is suitable for power modules like power banks and handheld device voltage regulator circuits, providing efficient power conversion and stable output voltage thanks to its low on-resistance and high current capability.
2. Battery Protection Circuits: In battery management systems, this dual-channel MOSFET can be used as a switching element to control the charge and discharge circuits separately, ensuring safe battery operation and extending lifespan.
3. Low-Voltage Motor Drive Modules: Suitable for low-voltage motor drive scenarios like small fan drivers and toy motor controllers, enabling motor start/stop and speed regulation.
4. Consumer Electronics Control Modules: In consumer electronics like smart sockets and USB switch circuits, this device can be used for load switching and power distribution control, improving system response speed and reliability.
5. LED Lighting Driver Field: Can be used for current control in low-voltage LED strips or lighting systems, ensuring constant current drive and high energy efficiency.
6. DC-DC Converters: In synchronous rectification and switching converter circuits, the dual N+N configuration helps simplify PCB layout and reduce conduction losses, suitable for high-efficiency, miniaturized converter designs.
7. Automotive Auxiliary Power Systems: This model can be used in auxiliary power control circuits for automotive electronic devices, providing stable and reliable power support for in-vehicle systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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