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SI6926ADQ-T1-E3-VB Product details
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**SI6926ADQ-T1-E3-VB is a Dual N+N channel MOSFET optimized for low-voltage power switching applications. Using Trench technology, it combines low conduction losses with high-speed switching capability. The TSSOP8 package integrates two independent N-MOSFETs in a limited space, providing a compact solution for high-density power management. The combination of 20V withstand voltage, 7.5A current capability, and a minimum on-resistance of 11mΩ makes it an ideal choice for battery-powered devices, load switches, and DC-DC converters.**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | 17(mΩ) | 12(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | 20V | 0.86V | 7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+N | MOS |
- **VDS=20V**: Suitable for 5V/12V low-voltage systems, providing sufficient margin for switching node spikes, enhancing circuit reliability.
- **VGS=±12V**: Compatible with low-voltage logic level drives; 2.5V/4.5V/10V drives can achieve full conduction, facilitating direct connection to MCU or PMIC.
- **Vth=0.86V**: Low threshold voltage supports low-voltage drive scenarios, ensuring effective turn-on even when the battery voltage drops.
- **RDS(on)=11mΩ @ VGS=10V**: Ultra-low on-resistance significantly reduces conduction losses and temperature rise, lowering heat sink design costs.
- **ID=7.5A**: Dual channels can be used in parallel or independently to meet the continuous current requirements of medium-power loads.
- **Package TSSOP8**: Small size, low parasitic parameters, suitable for high-density mounting, supports independent dual-channel routing, simplifying PCB layout.
- **Technology Trench**: Optimized cell structure achieves a balance between low gate charge and low on-resistance, suitable for medium to high-frequency switching applications.
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Domain and module applications：
- **Battery Protection Modules**: Dual N-MOSFETs can be used for charge and discharge circuits respectively. Low internal resistance reduces protection board self-heating, low threshold ensures reliable turn-off at low voltages.
- **Load Switches**: Dual-channel integration can replace two discrete MOSFETs, saving space, suitable for power path management in portable devices.
- **DC-DC Converters**: Replaces Schottky diodes in synchronous rectification applications, offering low dropout and high efficiency, facilitating module miniaturization.
- **Low-Voltage Motor Drives**: Low RDS(on) reduces driver temperature rise, low PWM switching losses, suitable for small fans, water pumps, etc.
- **Consumer Electronics Power Management**: Logic-level direct drive simplifies peripheral circuits, suitable for high-volume applications like smart wearables, e-cigarettes, USB-powered devices.
- **Battery-Powered Devices**: 20V withstand voltage covers single to multi-cell lithium battery applications, low quiescent power consumption and low voltage drop extend battery life.
**Selection Summary**: SI6926ADQ-T1-E3-VB, with its dual N+N integration, ultra-low on-resistance, and compact TSSOP8 package, provides a high-efficiency, high-density, and cost-effective solution for low-voltage switching applications, especially suitable for portable and modular designs with strict requirements on PCB area and thermal performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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