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Si6954ADQ-VB Product details

Product introduction:

Struggling with large footprint and high conduction losses in dual-channel low-voltage switch solutions? Let VBsemi Si6954ADQ-VB help! This TSSOP8-packaged dual N+N channel MOSFET integrates two high-performance power transistors into one, saving board space while supporting 7.5A continuous current and achieving an on-resistance as low as 11mΩ (@10V), significantly reducing heat generation. The Trench technology provides excellent switching characteristics and extremely low losses. With a 20V voltage rating, it perfectly covers applications such as low-voltage power supplies, battery protection, and DC-DC conversion, making it the 'dual-core powerhouse' for compact designs.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TSSOP8 Dual-N+N 20V 0.86V 7.5A 17(mΩ) 12(mΩ) 11(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TSSOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TSSOP8 Dual-N+N 20V 0.86V 7.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TSSOP8 Dual-N+N 20V 0.86V 7.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TSSOP8 Dual-N+N MOS

Voltage Rating: 20V (optimized for low-voltage systems, ample margin)
Gate Drive Range: ±12V (compatible with 2.5V/4.5V/10V logic drives)
Threshold Voltage: 0.86V (reliable turn-on with low-voltage control signals)
Ultra-Low On-Resistance: 11mΩ @ 10V (industry-leading conduction losses)
Dual-Transistor Configuration: Dual-N+N (two independent N-MOSFETs, flexible for half-bridge or synchronous rectification)
High Current Capability: 7.5A per channel (high power in a small package)
Package: TSSOP8 (high-density surface mount, suitable for portable and modular designs)
Technology: Trench (fast switching, low figure of merit)

Domain and module applications:


– Six Typical Scenarios, one solution
Low-Voltage DC-DC Conversion: Synchronous buck/boost, improves efficiency, reduces inductor size
Battery Protection and Management: Independent dual-channel control, fast abnormal current cutoff, protecting battery cells
Load Switches and Power Path Management: Low on-resistance reduces voltage drop, suitable for power switching in handheld devices
Motor Drives: Small fans, pumps, toy motors, smooth PWM speed control
LED Lighting Drivers: Precise constant current control, dual channels support two independent dimming channels
Redundant Power and OR-ing Circuits: Dual MOSFETs in reverse series, low-loss seamless switching

Si6954ADQ-VB – Two transistors in one, small package driving high current, making your low-voltage power supply design more compact and efficient!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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