中文
English
IXFH18N60X-VB Product details
Back to previous pageProduct introduction：
Still troubled by high heat generation and insufficient reliability in high-voltage systems? VBsemi IXFH18N60X-VB is here to solve your problems! This TO247-packaged N-MOSFET, utilizing advanced SJ_Multi-EPI superjunction technology, boasts a withstand voltage of up to 600V and an on-resistance of only 160mΩ, optimizing both switching and conduction losses. With a 20A high current capability combined with low on-resistance, it excels in applications such as high-voltage power supplies, inverters, and industrial drives, making it the 'hardcore powerhouse' for high-voltage power conversion.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | MOS |
Drain-Source Voltage (VDS): 600V (Sufficient margin for high-voltage systems, safe and reliable)
Gate-Source Voltage (VGS): ±30V (Compatible with 12V/15V/18V drives, strong adaptability)
Threshold Voltage (Vth): 3.5V (Standard gate drive, easy for stable control)
Ultra-Low On-Resistance: 160mΩ @ 10V (Low conduction losses, excellent temperature performance)
High Current Capability: 20A (TO247 package handles high power)
Package: TO247 (Excellent thermal performance, suitable for high power density designs)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxial process, combining high-frequency characteristics and low conduction losses)
Domain and module applications：
– Six High-Power Scenarios, One MOSFET Handles All
High-Voltage DC-DC Conversion: Industrial power supplies, telecom power supplies, high efficiency, strong reliability
Photovoltaic Inverters: MPPT and grid-tied power conversion, impact-resistant, low temperature rise
Energy Storage and Charging Piles: High-power charge/discharge control, low losses, more stable system
Motor Drives: Industrial motors, pumps, fans, precise speed control, smooth operation
UPS Uninterruptible Power Supplies: Critical load power backup, high withstand voltage, long lifespan
Electric Vehicle Auxiliary Power Supplies: High-voltage platform conversion, wide temperature range, automotive-grade quality assurance
IXFH18N60X-VB – High voltage, high current, balancing efficiency and stability, making your power system more robust!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
