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IPW60R190P6FKSA1-VB Product details
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Still troubled by high switching losses and difficult thermal management in high-voltage systems? VBsemi IPW60R190P6FKSA1-VB is here to help! This TO247-packaged N-MOSFET, utilizing superjunction multi-epitaxial technology, confidently handles 600V withstand voltage for industrial and new energy scenarios. With a 20A continuous current output capability and 160mΩ on-resistance, it significantly reduces conduction losses. The SJ_Multi-EPI structure brings faster switching speeds and better FOM values, making high-voltage power supply designs more efficient and reliable – a 'high-voltage weapon' for power electronics engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | MOS |
Drain-Source Voltage (VDS): 600V (High-voltage applications, ample margin)
Gate-Source Voltage (VGS): ±30V (Compatible with common 12V/15V drive solutions)
Threshold Voltage (Vth): 3.5V (Standard threshold, strong noise immunity)
Ultra-Low On-Resistance: 160mΩ @ 10V (Low conduction losses, minimal heat generation)
High Current Capability: 20A (Continuous current, stable output)
Package: TO247 (Excellent heat dissipation, suitable for high-power designs)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxial, fast switching, low losses)
Domain and module applications：
– Seven Popular Scenarios, One MOSFET Handles All
Switching Power Supplies: Efficient AC-DC conversion, improving overall efficiency and power density
Photovoltaic Inverters: MPPT and DC-AC cascading, reliable withstand voltage, low temperature rise
Charging Piles: High-voltage, high-current charging modules, stable output, longer lifespan
Motor Drives: Industrial variable frequency drives and servo control, crisp switching, smooth operation
UPS Uninterruptible Power Supplies: Efficient bypass and inverter switching, protecting critical loads
Energy Storage Systems: Battery charge/discharge management, high-voltage side switching, safe and reliable
High-Voltage Auxiliary Power Supplies: Industrial control and vehicle auxiliary power, wide temperature range, impact-resistant
IPW60R190P6FKSA1-VB – High-voltage platform, low losses, high efficiency, making your power design more robust!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
