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IPW60R145CFD7XKSA1-VB Product details

Product introduction:

The IPW60R145CFD7XKSA1-VB is a Single N-MOSFET optimized for high-voltage power conversion scenarios, utilizing SJ_Multi-EPI superjunction multi-epitaxial technology to balance low on-resistance and fast switching characteristics at a 600V voltage rating. The TO247 package provides excellent heat dissipation and current handling capability. The combination of 20A continuous current and 175mΩ on-resistance makes it a reliable choice for medium to high-power applications such as server power supplies, photovoltaic inverters, and industrial drives, particularly suitable for systems with strict requirements for efficiency and thermal stability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 600V 3.5V 20A 175(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 600V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 600V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N MOS

VDS=600V: Covers high-voltage platforms like three-phase industrial input, photovoltaic bus, and charging piles, with ample voltage margin to effectively handle switching spikes and surge impacts.
VGS=±30V: Large gate drive margin, compatible with standard MOSFET drivers and various PWM controllers, reducing the risk of false turn-on and improving system noise immunity.
Vth=3.5V (typical): Moderate threshold voltage, supports standard 10V~15V gate drive while avoiding excessively high drive voltage requirements, compatible with mainstream drive solutions.
RDS(on)=175mΩ @ VGS=10V: Based on superjunction multi-epitaxial technology, significantly reduces on-resistance per unit area, resulting in low full-load losses and facilitating improved power conversion efficiency.
ID=20A: Strong continuous current capability, capable of driving medium to high-power loads, combined with the TO247 package, suitable for prolonged high-load operation.
Package TO247: Through-hole mounting provides a short thermal path and low thermal resistance, suitable for power stage designs requiring external heatsinks, while supporting high voltage creepage distance requirements.

Domain and module applications:


Switching Power Supplies (SMPS): Low turn-off losses and low gate charge improve high-frequency operating efficiency, suitable as the main switch in LLC half-bridge or full-bridge topologies.
Photovoltaic Inverters: 600V withstand voltage matches photovoltaic string voltage, low on-resistance reduces DC-AC conversion losses, enhancing system power generation revenue.
Motor Drives and Industrial Control: 20A current capability covers 1kW~3kW class motor drives, stable operation in both hard-switching and soft-switching circuits.
Uninterruptible Power Supplies (UPS): Provides efficient power conversion in battery inverter and mains compensation paths, enhancing overload and short-circuit withstand capability.
Charging Piles and Energy Storage Converters: Reliable for high-voltage bus switching applications, superjunction technology brings low-loss heat dissipation, simplifying thermal design and increasing power density.
Welding Equipment and Induction Heating: High-frequency switching characteristics combined with the TO247 package can handle high-voltage, high-current pulse conditions, extending equipment lifespan.
Electric Vehicle Auxiliary Power Supplies (DC-DC): Wide safety margin and strong surge withstand capability meet the stringent reliability requirements of automotive high-voltage bus power devices.

Selection Summary: The IPW60R145CFD7XKSA1-VB achieves an optimized balance between a 600V high-voltage platform, 20A current capability, and 175mΩ on-resistance. Leveraging superjunction multi-epitaxial technology and the TO247 package, it is suitable for high-efficiency, high-reliability industrial and energy-related power conversion systems, serving as a cost-effective upgrade option over traditional planar high-voltage MOSFETs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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