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IPL65R065CFD7AUMA1-VB Product details
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The VBsemi IPL65R065CFD7AUMA1-VB is a Single N-channel field-effect transistor belonging to VBsemi's high-performance high-voltage MOSFET series. This product utilizes SJ_Multi-EPI (Super-Junction Multi-Layer Epitaxial) technology, featuring extremely low on-resistance and high withstand voltage capability, suitable for high-efficiency, high-reliability power conversion applications. The device has a drain-source voltage (VDS) of 650V and can operate stably within a gate-source voltage (VGS) range of ±30V. The product is packaged in DFN8X8, offering excellent thermal dissipation and a compact footprint, suitable for medium to high power density design requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | MOS |
Drain-Source Voltage (VDS): 650V
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (VGS=10V): 160 mΩ
Maximum Drain Current (ID): 20A
Technology: SJ_Multi-EPI (Super-Junction Multi-Layer Epitaxial)
Domain and module applications：
1. Switching Power Supplies (SMPS): The IPL65R065CFD7AUMA1-VB is suitable for primary-side switching circuits in high-efficiency AC-DC switching power supplies. Its 650V withstand voltage and low on-resistance can significantly reduce losses and improve power conversion efficiency.
2. Photovoltaic Inverters: In photovoltaic power generation systems, this device can be used in the boost or inverter stage of DC-AC inverters, supporting high-voltage bus design and ensuring stable system operation.
3. Charging Piles and On-Board Chargers: Suitable for power conversion circuits in electric vehicle charging piles and on-board charging modules, capable of withstanding high voltage stress and providing high current output capability.
4. Industrial Motor Drives: In motor control applications such as industrial variable frequency drives and servo drives, this MOSFET can be used as a power switch, achieving efficient speed regulation and energy-saving operation.
5. UPS Uninterruptible Power Supplies: In the inverter and rectifier of UPS, this device, with its high reliability and low loss characteristics, is suitable for online UPS power stage design.
6. High-Voltage DC-DC Converters: Suitable for high-voltage input DC-DC converters such as communication power supplies and server power supplies, used as main switches or synchronous rectification devices to optimize system performance.
7. Power Electronics Auxiliary Power Supplies: Can be used in high-voltage bus auxiliary power supply circuits, such as switching regulator power supplies for industrial control boards, providing stable and reliable power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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