中文
English
FCMT180N65S3-VB Product details
Back to previous pageProduct introduction：
The FCMT180N65S3-VB is a Single N-MOS meticulously optimized for high-voltage power switching scenarios. Utilizing SJ_Multi-EPI super-junction multi-epitaxial technology, it achieves an excellent balance between low on-resistance and low switching losses at a 650V voltage rating. The DFN8X8 package provides excellent heat dissipation paths and power density. The combination of a 20A current carrying capacity and 160mΩ on-resistance makes it an ideal choice for medium to high-power applications such as server power supplies, photovoltaic inverters, and industrial drives, especially for systems with strict requirements for efficiency and reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| DFN8X8 | Single-N | MOS |
VDS=650V: Covers 220V/380V industrial-grade bus voltages, suitable for topologies like PFC, LLC, and flyback, providing sufficient voltage margin for spikes and reducing avalanche breakdown risk.
VGS=±30V: Large gate drive margin, compatible with common PWM controllers and gate driver ICs, eliminating the need for additional clamping circuits and improving system noise immunity.
Vth=3.5V (Typical): Moderate threshold voltage effectively suppresses dv/dt-induced false turn-on while ensuring stable turn-on over a wide temperature range.
RDS(on)=160mΩ @ VGS=10V: Achieves low on-resistance based on super-junction multi-epitaxial technology, significantly reducing full-load losses, simplifying thermal design, and improving overall system efficiency.
ID=20A: Ample continuous current capability to handle transient peak demands such as motor startup and capacitor charging, suitable for medium to high-power power modules.
Package DFN8X8: Low thermal resistance, low parasitic inductance, supports high-density layout, balancing power cycling life and assembly yield, suitable for industrial-scale mass production.
Domain and module applications：
High-Voltage Switching Power Supplies: The combination of 650V withstand voltage and low on-resistance significantly improves the efficiency of flyback/forward converters, reducing switch temperature rise, suitable for communication and server power supplies.
Photovoltaic Inverters and Energy Storage Systems: The super-junction structure reduces conduction losses, and the 20A current capability supports the Boost/inverter stage of string inverters, improving MPPT conversion efficiency.
Charging Piles and On-Board Chargers (OBC): High voltage margin handles grid fluctuations, the DFN8X8 package facilitates compact module design, meeting high power density requirements.
Industrial Motor Drives and Inverters: Low switching losses and anti-false-turn-on capability, suitable for IGBT/MOSFET hybrid drive architectures, improving electromagnetic compatibility performance.
UPS Uninterruptible Power Supplies: Provides reliable switching in mains/battery switching and inverter circuits, low on-resistance reduces battery discharge losses, extending backup time.
High-Power LED Lighting Power Supplies: Used in PFC and constant voltage/constant current stages, high voltage and low resistance characteristics improve overall luminaire efficiency, simplify thermal structures, and reduce overall costs.
High-Voltage DC-DC Converters: Replaces traditional high-voltage devices in 400V bus step-down systems, significantly improving heavy-load efficiency, facilitating miniaturization of power modules.
Selection Summary: The FCMT180N65S3-VB achieves a balance between high voltage withstand capability, on-resistance, package thermal performance, and system cost. It is a cost-effective general-purpose choice for 650V high-voltage switching applications, particularly suitable for industrial and new energy projects with strict requirements for efficiency, reliability, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
