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STP36N55M5-VB Product details
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Struggling with high conduction losses and thermal management challenges in high-voltage, high-current applications? Let VBsemi STP36N55M5-VB help! This TO220-packaged N-MOSFET utilizes advanced SJ_Multi-EPI super-junction technology, combining a 650V high voltage rating with a 32A high current capability, and an on-resistance of only 85mΩ, offering loss performance far exceeding similar high-voltage devices. Whether in switching power supplies, inverter systems, or industrial drives, it serves as a 'hardcore workhorse' for your high-voltage power design with stable and reliable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 3.5V | 32A | 85(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 3.5V | 32A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 3.5V | 32A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | MOS |
Voltage Rating: 650V (handles high-voltage systems with ease, ample safety margin)
Gate Drive Range: ±30V (compatible with various gate drive schemes, flexible adaptation)
Threshold Voltage: 3.5V (effectively driven by standard logic levels, simple control)
Ultra-Low On-Resistance: 85mΩ @ 10V (extremely low losses among high-voltage devices, less heat generation)
High Current Capability: 32A (strong continuous current output, excellent overload capability)
Package: TO220 (good thermal dissipation, suitable for through-hole mounting, convenient for power layout)
Technology: SJ_Multi-EPI Super-Junction Multi-Epitaxial Process (excellent switching characteristics, high reliability)
Domain and module applications：
– Six High-Voltage Scenarios, one solution
Switching Power Supplies: Efficient LLC / flyback topologies, helping power modules improve efficiency and reduce losses
Inverters and UPS: Photovoltaic inverters, emergency power supplies, stable output, strong impact resistance
Motor Drives: Industrial motors, pump loads, powerful drive, smooth operation
Charging Stations and Onboard Chargers: Core of high-voltage conversion, improving charging efficiency and reliability
Power Factor Correction (PFC): Low conduction losses, effectively improving power quality
Industrial Control and High-Voltage Auxiliary Power Supplies: Wide safety margin, adaptable to harsh operating conditions, durable and long-lasting
STP36N55M5-VB – A new benchmark in high voltage, making your power design more capable!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
