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SIJA52DP-T1-GE3-VB Product details

Product introduction:

Still struggling with conduction losses and heat dissipation issues for high-current, low-voltage switches? The VBsemi SIJA52DP-T1-GE3-VB makes a powerful entrance! This N-MOSFET in an LFPAK56 package, using advanced SGT technology, squeezes the on-resistance down to just 0.7mΩ (@10V). Even when facing an impressive 150A current capability, it maintains an extremely low temperature rise. The 40V withstand voltage combined with a ±20V wide gate drive range makes it excel in high-power scenarios like power conversion and motor drives – it's the 'energy gate' for industrial-grade applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
LFPAK56 Single-N 40V 3V 150A 0.7(mΩ) SGT
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
LFPAK56 Single-N SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
LFPAK56 Single-N 40V 3V 150A SGT
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
LFPAK56 Single-N MOS

Withstand Voltage: 40V (ample margin for handling transient overvoltages)
Drive Range: ±20V (compatible with 3.3V/5V/10V/12V drives, flexible design)
Turn-on Threshold: 3V (logic level controllable, clear switching characteristics)
Ultra-Low On-Resistance: 0.7mΩ @ 10V (negligible conduction losses, maximizing efficiency)
High Current Capability: 150A (massive current handling, continuous power)
Package: LFPAK56 (low thermal resistance, low parasitic inductance, suitable for high power density layouts)
Technology: SGT (Shielded Gate Trench, better figure of merit, lower switching losses)

Domain and module applications:


– Five High-Power Scenarios, One Solution
High-Current DC-DC Conversion: Synchronous rectification in server and telecom power supplies, achieving both efficiency and power density
Motor Drives: Power tools, drones, robot joints, responsive and powerful drive
Battery Protection and Switching: Energy storage systems, power battery packs, instantaneous high-current interruption, safe and reliable
Automotive Electronics: On-board DC-DC, body control, shock-resistant, wide temperature range, stable and durable
Load Switches and Power Distribution: Industrial control, AI accelerator card hot-swap, low-loss power supply, confidently handling peak currents

SIJA52DP-T1-GE3-VB – Ultra-low resistance, massive current, no compromise in high-power design!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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