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SIJA54DP-T1-GE3-VB Product details
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Are you designing a high-power-density power module with extremely limited board space, yet needing to handle peak currents up to 150A? Traditional MOSFETs either have packages that are too large or conduction losses so high that the thermal system becomes overwhelmed. The VBsemi SIJA54DP-T1-GE3-VB is built for this – it integrates 40V withstand voltage, 150A current capability, and an ultra-low on-resistance of only 0.7mΩ all into the LFPAK56 (5x6mm) package, allowing high-current designs to no longer compromise on heat and space.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | MOS |
Withstand Voltage 40V, covering low-voltage, high-current application scenarios
Gate Drive Range ±20V, compatible with various drive voltages
Threshold Voltage 3V, clear and reliable switching characteristics
On-Resistance 0.7mΩ (at 10V drive), extremely low losses, maximizing efficiency
Maximum Current 150A, powered by SGT technology, strong current handling capability
Package LFPAK56, balancing thermal performance and compact layout
Domain and module applications：
High-Power DC-DC Buck Modules – Used as the low-side switch in synchronous rectification, significantly reducing conduction losses and improving conversion efficiency.
Power Tool Battery Packs – Withstands high current surges in motor drive circuits; low resistance reduces temperature rise, extending tool runtime.
Automotive 48V/12V Power Systems – Tolerates automotive voltage fluctuations, providing a reliable power path for loads.
Server Power / Telecom Base Station Power Supplies – Operates stably in high current density scenarios, working with efficient thermal designs for long-term reliable operation.
Lithium Battery Protection Boards / BMS – Quickly disconnects the circuit during overcurrent or short circuit events, protecting battery cells.
High-Power Charging Stations / Energy Storage Inverters – Utilizes ultra-low on-resistance to reduce overall system power consumption and improve system efficiency.
Summary: The SIJA54DP-T1-GE3-VB is not an ordinary MOSFET; it is the 'low-loss switching master' and 'power density champion' in your high-current power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
