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SQJA76EP-T1_GE3-VB Product details
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The SQJA76EP-T1_GE3-VB is a Single N-MOSFET deeply optimized for low-voltage, high-current power switching applications. Using advanced SGT technology, it achieves an excellent balance between extremely low on-resistance and switching speed. The LFPAK56 package offers excellent heat dissipation and low parasitic parameters, making it suitable for high-density power conversion and high-current applications like power tools. The combination of 40V withstand voltage, 150A current capability, and 0.7mΩ on-resistance makes it an ideal, cost-effective alternative to traditional DPAK or TO-220 devices in low-voltage, high-power paths.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | MOS |
VDS=40V: Suitable for 12V/24V/36V systems, providing ample margin for voltage spikes, reducing avalanche breakdown risk, and improving system reliability.
VGS=±20V: Compatible with 4.5V~12V logic level drives, can be directly connected to controllers or driver ICs, simplifying the gate drive circuit.
Vth=3V (typical): Moderate threshold voltage, strong noise immunity, while ensuring full conduction with a 10V drive.
RDS(on)=0.7mΩ @ VGS=10V: Ultra-low on-resistance, extremely low power loss at full load, significantly reducing temperature rise, allowing for smaller heatsinks or copper areas.
ID=150A: Strong continuous current capability, easily handles high transient current surges like motor startup or battery short-circuit protection.
Package LFPAK56: Low thermal resistance, low parasitic inductance, supports high-current fast switching, saves PCB area and increases power density.
Domain and module applications：
High-Power DC-DC Converters: Replaces Schottky diodes or multiple parallel MOSFETs in synchronous rectification paths, significantly improving heavy-load efficiency and reducing module size.
Power Tools and Motor Drives: The 0.7mΩ on-resistance reduces PWM losses; the 150A current margin ensures reliable handling of stall/startup surges, noticeably lowering controller temperature rise.
Battery Protection and BMS: Ultra-low internal resistance reduces self-heating on the protection board; fast response ensures reliable shutdown during overcurrent/short circuit, suitable for large-capacity lithium/lead-acid systems.
Automotive Power and Auxiliary Loads: 40V withstand voltage is compatible with 12V/24V automotive buses; the LFPAK56 package is vibration-resistant, suitable for harsh environments like engine compartments.
Server and Telecom Power Supplies: Application in low-voltage, high-current rectification stages significantly reduces conduction losses, improves overall efficiency, and meets high-density layout requirements.
Energy Storage Inverters: Low-loss design in charge/discharge paths extends system runtime and improves energy utilization.
Power Path Switches: Suitable for power OR-ing, load switching, etc. Extremely low impedance reduces voltage drop and power loss.
Selection Summary: The SQJA76EP-T1_GE3-VB achieves a perfect balance between extremely low on-resistance, massive current capability, and a compact thermal package. It is a flagship, cost-effective choice for 40V low-voltage, high-power switching applications, especially suitable for projects with extreme requirements for efficiency, temperature rise, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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