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SQJ136ELP-T1_GE3-VB Product details
Back to previous pageProduct introduction：
The VBsemi SQJ136ELP-T1_GE3-VB is a Single N-Channel Field Effect Transistor, part of the VBsemi brand's high-performance power MOSFET product series. This product is manufactured using advanced SGT (Split Gate Trench) technology, featuring extremely low on-resistance and excellent current handling capability, suitable for high-power, high-efficiency power conversion and control applications. The device is housed in an LFPAK56 package, offering good thermal performance and a compact footprint, ideal for modern high-density power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | MOS |
- Drain-Source Voltage (VDS): 40V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 3V
- On-Resistance (RDS(on) at VGS=10V): 0.7mΩ
- Maximum Drain Current (ID): 150A
- Package Type: LFPAK56
- Technology: SGT
Domain and module applications：
1. High-Current Power Management Modules: The SQJ136ELP-T1_GE3-VB is suitable for high current density scenarios like server power supplies and telecom power supplies, significantly reducing conduction losses and improving overall system efficiency.
2. Battery Protection and BMS Systems: In traction battery and energy storage battery management systems, this device can serve as a high-side or low-side switch for charge/discharge circuits, supporting high-current switching and ensuring safe and reliable system operation.
3. DC-DC Converters: Suitable for the rectification and switching stages in synchronous buck or boost converters, the ultra-low on-resistance helps improve conversion efficiency and reduce thermal requirements.
4. Motor Drive Modules: Can be used in power tools, low-voltage industrial motors, and robot drive circuits, enabling high-current drive and precise start/stop and speed control.
5. Automotive Power Systems: In automotive electronics, suitable for body control, on-board chargers, and auxiliary power supplies, meeting high reliability and wide temperature range requirements.
6. Load Switches and Power Distribution Protection: Acts as a high-side load switch, suitable for smart power distribution units, hot-swap circuits, etc., providing a low-loss power path and stable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
