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SQJ138EP-T1_GE3-VB Product details
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Struggling with high heat generation and low efficiency in high-current power conversion? The VBsemi SQJ138EP-T1_GE3-VB is here to help! This N-MOSFET in an LFPAK56 package, utilizing advanced SGT technology, can handle a massive 150A current with a single device, achieving an ultra-low on-resistance of 0.7mΩ (@10V), minimizing power loss. With a 40V voltage rating covering medium and low voltage industrial and automotive systems, combined with extremely low conduction loss and excellent switching characteristics, it helps your power solution achieve higher efficiency and smaller thermal footprint. It is a "hardcore tool" for high-performance power design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | MOS |
Drain-Source Voltage (VDS): 40V (ample margin, safe and reliable)
Gate-Source Voltage (VGS): ±20V (compatible with various gate drive voltages)
Threshold Voltage (Vth): 3V (standard logic level controllable, flexible design)
Ultra-Low On-Resistance (RDS(on)): 0.7mΩ @ VGS=10V (extremely low conduction loss, excellent current handling)
High Current Capability (ID): 150A (high power from a single device, simplifying parallel design)
Package: LFPAK56 (low thermal resistance, strong heat dissipation, suitable for high-density power layouts)
Technology: SGT (Shielded Gate Trench structure, optimized switching and conduction losses)
Domain and module applications：
– Six High-Power Scenarios, One Device Handles All
Automotive Electronics: On-board DC-DC, electric power steering, motor control, handling high-current surges with ease
Power Systems: Server power supplies, telecom power supply synchronous rectification, significant efficiency improvement, lower temperature rise
Lithium Battery Protection: High-rate charge/discharge circuits, instant fault current interruption, safeguarding battery safety
Power Tools: High-power brushless motor drive, powerful output, smooth speed control
Industrial Control: PLC, servo drive power stages, stable and reliable, strong overload capability
Distributed Photovoltaics: MPPT charge controllers, energy storage inverters, enabling efficient green energy conversion
SQJ138EP-T1_GE3-VB – High current, low loss, injecting powerful momentum into your power design!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
