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NVMYS2D9N04CLTWG-VB Product details
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You are designing a high-power-density DC-DC converter with limited PCB space, yet it must withstand current surges of hundreds of amperes. Ordinary MOSFETs either suffer from high conduction losses or have unacceptable package sizes. The VBsemi NVMYS2D9N04CLTWG-VB is designed precisely for this—it integrates a 40V withstand voltage, 150A current-carrying capability, and an ultra-low on-resistance of just 0.7mΩ into the compact LFPAK56 package, allowing high-power power supply designs to no longer compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | 0.7(mΩ) | SGT |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | 40V | 3V | 150A | SGT |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| LFPAK56 | Single-N | MOS |
Withstand Voltage: 40V, suitable for low-voltage, high-current scenarios
Gate Drive Range: ±20V, compatible with various drive levels
Threshold Voltage: 3V, providing clear and stable switching characteristics
On-Resistance: 0.7mΩ (at 10V drive), minimizing losses
Maximum Current: 150A, delivering powerful performance in a small package
Technology Architecture: SGT (Split Gate Trench), optimizing switching and conduction performance
Domain and module applications：
Motor Drive Module – Used as a power switch, significantly reducing temperature rise with ultra-low on-resistance, enhancing continuous output capability.
Server Power Supply / Telecom Power Supply – Replaces Schottky diodes in synchronous rectification DC-DC topologies, improving conversion efficiency and simplifying thermal design.
Lithium Battery Protection Board – Quickly disconnects the circuit when overcurrent or short circuit is detected, providing reliable safety protection for large-capacity battery packs.
Automotive Electronic Systems – Withstands 12V/24V vehicle voltage fluctuations, used in high-current load channels such as body control and electric pumps.
Power Tools / Drones – Leverages 150A high-current capability and SGT technology advantages for powerful drive and smooth speed control.
High-Power LED Drivers – Stably handles large current ripple, reducing efficiency loss caused by conduction voltage drop.
Battery Formation / Testing Equipment – Precisely controls high-current charging and discharging circuits, improving equipment integration and reliability.
One-Sentence Summary: The NVMYS2D9N04CLTWG-VB is not an ordinary MOSFET; it is the "performance engine" and "loss killer" for your high-power, high-density power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
